Selective oxidation of buried AlGaAs versus AlAs layers

Kent D. Choquette, K. M. Geib, H. C. Chui, B. E. Hammons, H. Q. Hou, T. J. Drummond, Robert Hull

Research output: Contribution to journalArticlepeer-review

Abstract

We report significant differences between the properties of buried oxides converted from AlGaAs and AlAs layers using selective wet oxidation. Layers of AlxGa1-xAs with x≥0.96 exhibit crystallographic dependent oxidation rates, while for layers with x≤0.92 the oxidation rate is isotropic. Mesas containing partially oxidized layers of AlAs are unstable to rapid thermal cycling and exhibit excessive strain at the oxide terminus, while mesas containing partially oxidized layers of AlGaAs are robust and lack evidence of strain. Finally, the oxidation of AlGaAs layers, rather than AlAs, is found to provide robust oxide apertures for reliable vertical-cavity surface emitting lasers.

Original languageEnglish (US)
Pages (from-to)1385-1387
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number10
DOIs
StatePublished - Sep 2 1996
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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