Selective growth of an InGaAs QW active layer in a photonic crystal optical microcavity

Victor C. Elarde, Yong Kwan Kim, Kent D Choquette, James J. Coleman

Research output: Contribution to journalConference articlepeer-review

Abstract

The use of an InGaAs quantum well as the active layer of a photonic crystal microcavity is problematic in that the perforation of the quantum well creates non-radiative recombination sites. The reduction of non-radiative recombination is one reason that phosphide based materials is primarily used as active layers in photonic crystal research to date. This paper proposes to eliminate inhibiting growth of the quantum well in the region that will be etched during the formation of the photonic crystal.

Original languageEnglish (US)
Pages (from-to)696-697
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
StatePublished - Dec 9 2003
Event2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States
Duration: Oct 26 2003Oct 30 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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