Abstract
The use of an InGaAs quantum well as the active layer of a photonic crystal microcavity is problematic in that the perforation of the quantum well creates non-radiative recombination sites. The reduction of non-radiative recombination is one reason that phosphide based materials is primarily used as active layers in photonic crystal research to date. This paper proposes to eliminate inhibiting growth of the quantum well in the region that will be etched during the formation of the photonic crystal.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 696-697 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| State | Published - 2003 |
| Event | 2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States Duration: Oct 26 2003 → Oct 30 2003 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering