Selective-Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires

Stephen T. Gill, Jeff Damasco, Blanka E. Janicek, Malcolm S. Durkin, Vincent Humbert, Sasa Gazibegovic, Diana Car, Erik P.A.M. Bakkers, Pinshane Y. Huang, Nadya Mason

Research output: Contribution to journalArticle

Abstract

Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the superconductor and nanowire is strongly believed to be the main culprit for disorder and the resulting "soft superconducting gap" ubiquitous in tunneling studies of hybrid semiconductor-superconductor systems. Additionally, a lack of ballistic transport in nanowire systems can create bound states that mimic Majorana signatures. We resolve these problems through the development of selective-area epitaxy of Al to InSb nanowires, a technique applicable to other nanowires and superconductors. Epitaxial InSb-Al devices generically possess a hard superconducting gap and demonstrate ballistic 1D superconductivity and near-perfect transmission of supercurrents in the single mode regime, requisites for engineering and controlling 1D topological superconductivity. Additionally, we demonstrate that epitaxial InSb-Al superconducting island devices, the building blocks for Majorana-based quantum computing applications, prepared using selective-area epitaxy can achieve micron-scale ballistic 1D transport. Our results pave the way for the development of networks of ballistic superconducting electronics for quantum device applications.

Original languageEnglish (US)
Pages (from-to)6121-6128
Number of pages8
JournalNano letters
Volume18
Issue number10
DOIs
StatePublished - Oct 10 2018

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Ballistics
Epitaxial growth
epitaxy
ballistics
Superconducting materials
Nanowires
nanowires
Semiconductor materials
quantum computation
Superconductivity
superconductivity
Superconducting devices
disorders
inhomogeneity
Electronic equipment
signatures
engineering
electronics
Experiments

Keywords

  • Epitaxy
  • aluminum
  • ballistic transport
  • indium antiminoide
  • nanowires
  • supercondivity

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Gill, S. T., Damasco, J., Janicek, B. E., Durkin, M. S., Humbert, V., Gazibegovic, S., ... Mason, N. (2018). Selective-Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires. Nano letters, 18(10), 6121-6128. https://doi.org/10.1021/acs.nanolett.8b01534

Selective-Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires. / Gill, Stephen T.; Damasco, Jeff; Janicek, Blanka E.; Durkin, Malcolm S.; Humbert, Vincent; Gazibegovic, Sasa; Car, Diana; Bakkers, Erik P.A.M.; Huang, Pinshane Y.; Mason, Nadya.

In: Nano letters, Vol. 18, No. 10, 10.10.2018, p. 6121-6128.

Research output: Contribution to journalArticle

Gill, ST, Damasco, J, Janicek, BE, Durkin, MS, Humbert, V, Gazibegovic, S, Car, D, Bakkers, EPAM, Huang, PY & Mason, N 2018, 'Selective-Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires', Nano letters, vol. 18, no. 10, pp. 6121-6128. https://doi.org/10.1021/acs.nanolett.8b01534
Gill ST, Damasco J, Janicek BE, Durkin MS, Humbert V, Gazibegovic S et al. Selective-Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires. Nano letters. 2018 Oct 10;18(10):6121-6128. https://doi.org/10.1021/acs.nanolett.8b01534
Gill, Stephen T. ; Damasco, Jeff ; Janicek, Blanka E. ; Durkin, Malcolm S. ; Humbert, Vincent ; Gazibegovic, Sasa ; Car, Diana ; Bakkers, Erik P.A.M. ; Huang, Pinshane Y. ; Mason, Nadya. / Selective-Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires. In: Nano letters. 2018 ; Vol. 18, No. 10. pp. 6121-6128.
@article{d8b97097714d4d1faefbfa593bcf2e28,
title = "Selective-Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires",
abstract = "Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the superconductor and nanowire is strongly believed to be the main culprit for disorder and the resulting {"}soft superconducting gap{"} ubiquitous in tunneling studies of hybrid semiconductor-superconductor systems. Additionally, a lack of ballistic transport in nanowire systems can create bound states that mimic Majorana signatures. We resolve these problems through the development of selective-area epitaxy of Al to InSb nanowires, a technique applicable to other nanowires and superconductors. Epitaxial InSb-Al devices generically possess a hard superconducting gap and demonstrate ballistic 1D superconductivity and near-perfect transmission of supercurrents in the single mode regime, requisites for engineering and controlling 1D topological superconductivity. Additionally, we demonstrate that epitaxial InSb-Al superconducting island devices, the building blocks for Majorana-based quantum computing applications, prepared using selective-area epitaxy can achieve micron-scale ballistic 1D transport. Our results pave the way for the development of networks of ballistic superconducting electronics for quantum device applications.",
keywords = "Epitaxy, aluminum, ballistic transport, indium antiminoide, nanowires, supercondivity",
author = "Gill, {Stephen T.} and Jeff Damasco and Janicek, {Blanka E.} and Durkin, {Malcolm S.} and Vincent Humbert and Sasa Gazibegovic and Diana Car and Bakkers, {Erik P.A.M.} and Huang, {Pinshane Y.} and Nadya Mason",
year = "2018",
month = "10",
day = "10",
doi = "10.1021/acs.nanolett.8b01534",
language = "English (US)",
volume = "18",
pages = "6121--6128",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "10",

}

TY - JOUR

T1 - Selective-Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires

AU - Gill, Stephen T.

AU - Damasco, Jeff

AU - Janicek, Blanka E.

AU - Durkin, Malcolm S.

AU - Humbert, Vincent

AU - Gazibegovic, Sasa

AU - Car, Diana

AU - Bakkers, Erik P.A.M.

AU - Huang, Pinshane Y.

AU - Mason, Nadya

PY - 2018/10/10

Y1 - 2018/10/10

N2 - Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the superconductor and nanowire is strongly believed to be the main culprit for disorder and the resulting "soft superconducting gap" ubiquitous in tunneling studies of hybrid semiconductor-superconductor systems. Additionally, a lack of ballistic transport in nanowire systems can create bound states that mimic Majorana signatures. We resolve these problems through the development of selective-area epitaxy of Al to InSb nanowires, a technique applicable to other nanowires and superconductors. Epitaxial InSb-Al devices generically possess a hard superconducting gap and demonstrate ballistic 1D superconductivity and near-perfect transmission of supercurrents in the single mode regime, requisites for engineering and controlling 1D topological superconductivity. Additionally, we demonstrate that epitaxial InSb-Al superconducting island devices, the building blocks for Majorana-based quantum computing applications, prepared using selective-area epitaxy can achieve micron-scale ballistic 1D transport. Our results pave the way for the development of networks of ballistic superconducting electronics for quantum device applications.

AB - Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the superconductor and nanowire is strongly believed to be the main culprit for disorder and the resulting "soft superconducting gap" ubiquitous in tunneling studies of hybrid semiconductor-superconductor systems. Additionally, a lack of ballistic transport in nanowire systems can create bound states that mimic Majorana signatures. We resolve these problems through the development of selective-area epitaxy of Al to InSb nanowires, a technique applicable to other nanowires and superconductors. Epitaxial InSb-Al devices generically possess a hard superconducting gap and demonstrate ballistic 1D superconductivity and near-perfect transmission of supercurrents in the single mode regime, requisites for engineering and controlling 1D topological superconductivity. Additionally, we demonstrate that epitaxial InSb-Al superconducting island devices, the building blocks for Majorana-based quantum computing applications, prepared using selective-area epitaxy can achieve micron-scale ballistic 1D transport. Our results pave the way for the development of networks of ballistic superconducting electronics for quantum device applications.

KW - Epitaxy

KW - aluminum

KW - ballistic transport

KW - indium antiminoide

KW - nanowires

KW - supercondivity

UR - http://www.scopus.com/inward/record.url?scp=85053729639&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053729639&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.8b01534

DO - 10.1021/acs.nanolett.8b01534

M3 - Article

C2 - 30200769

AN - SCOPUS:85053729639

VL - 18

SP - 6121

EP - 6128

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 10

ER -