Selective Area Heteroepitaxy of p-i-n Junction GaP Nanopillar Arrays on Si (111) by MOCVD

Wonsik Choi, Hsien Chih Huang, Shizhao Fan, Parsian K. Mohseni, Minjoo Larry Lee, Xiuling Li

Research output: Contribution to journalArticlepeer-review


Gallium phosphide (GaP) is an important optical material due to its visible wavelength band gap and high refractive index. However, the bandgap of the thermodynamically stable zinc blende GaP is indirect, but wurtzite (WZ) structure GaP is direct bandgap. In this work, we demonstrate high-quality and dense GaP vertical nanopillar (NP) array directly on Si (111) substrates through selective area epitaxy (SAE) by MOCVD for the first time, through systemic studies of the effect of TMGa flow rate, growth temperature, and V/III ratio. Uniform GaP NPs are grown over a patterned $400\,\,\mu \text{m}\,\,\times 400\,\,\mu \text{m}$ area with 97.5% yield. Arrays of GaP vertical p-i-n NP diodes are demonstrated with a ideality factor and rectification ratio of 3.7 and 103, respectively. With the high yield of hexagonal structure and electrically proven device quality of GaP NPs through this growth method, this work represents a significant step in achieving GaP NP based optoelectronic devices, such as micro-LEDs emitting in the green wavelength range.

Original languageEnglish (US)
Article number3200106
JournalIEEE Journal of Quantum Electronics
Issue number4
StatePublished - Aug 1 2022
Externally publishedYes


  • Fluid flow
  • Gallium phosphide
  • Nanopillar
  • Nanostructures
  • Nanowire
  • Photonic band gap
  • Selective area epitaxy
  • Silicon
  • Substrates
  • Surface morphology
  • Surface topography
  • selective area epitaxy
  • nanopillar
  • nanowire

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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