For the first time, selective-area growth (SAG) technique has been developed using plasma-assisted molecular beam epitaxy (PAMBE), enabling fabrication of a recessed-gate structure for the metalsemiconductor field-effect transistor (MESFET) without etching. On patterned SiO 2 samples, polycrystalline GaN and single crystal n +-GaN were observed to grow in the masked and unmasked regions, respectively. The regrown layers were analyzed using AFM. Ohmic contact formed on the n +-GaN exhibited a vastly improved contact resistivity of 1.8 × 10 -8 Ω cm 2, giving rise to excellent device characteristics including a peak drain current of 360 mA/mm and a maximum transconductance of 46 mS/mm. The advantages of SAG were further investigated by comparing the dc characteristics of recessed-gate and unrecessed MESFET.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|State||Published - May 1 2006|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials