@article{5c7a8400784d413c930a48315bc47287,
title = "Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition",
abstract = "The selective area growth (SAG) and properties of AlGaN/GaN heterojunction bipolar transistors (HBTs) grown by low-pressure metalorganic chemical vapor deposition (MOCVD) are described and analyzed. Transistors based on group III-nitride material are attractive for high-power and high-temperature applications. Much work has been focused on improving p-type material, as well as heterojunction interfaces. However, there have been very few reports on HBTs operating at room temperature. At this time, current gains for nitride-based HBTs have been limited to ∼ 10. Selective area regrowth was applied to the growth of AlGaN/GaN HBTs to analyze its potential advantages as compared to more traditional growth techniques in order to realize improved electrical performance of the devices.",
keywords = "Aluminum gallium nitride, Heterojunction bipolar transistor, Regrowth, Selective area growth",
author = "Shelton, {Bryan S.} and Lambert, {Damien J.H.} and Huang, {Jian Jang} and Wong, {Michael M.} and Uttiya Chowdhury and Zhu, {Ting Gang} and Kwon, {H. K.} and Z. Liliental-Weber and M. Benarama and Milton Feng and Dupuis, {Russell D.}",
note = "Funding Information: Manuscript received April 19, 2000; revised October 31, 2000. This work was supported in part by the Office of Naval Research under Grants N00014-95-1-1302 and N000014-99-1-0479 (J. C. Zolper), and by the NSF STC program under Grant CHE-89-20120. The review of this paper was arranged by Editor J. C. Zolper. B. S. Shelton is with Emcore Corporation, Somerset, NJ 08873 USA. D. J. H. Lambert is with is with Nortel Networks, Wilmington, MA 01887 USA. J. J. Huang and M. Feng are with the Microelectronics Laboratory, University of Illinois, Urbana, IL 61801 USA. M. M. Wong, U. Chowdhury, T. G. Zhu, and R. D. Dupuis are with the Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712-110 USA (e-mail: dupuis@mail.utexas.edu). H. K. Kwon is with Honeywell Laboratories, Minneapolis, MN 55418 USA. Z. Liliental-Weber and M. Benarama are with Lawrence Berkeley National Laboratory, Berkeley, CA 94720 USA. Publisher Item Identifier S 0018-9383(01)01458-7.",
year = "2001",
month = mar,
doi = "10.1109/16.906441",
language = "English (US)",
volume = "48",
pages = "490--494",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}