Selective area epitaxy of GaP nanowire array on Si (111) by MOCVD

Physics & Astronomy

• gallium phosphides 69%
• epitaxy 49%
• metalorganic chemical vapor deposition 47%
• nanowires 40%
• crystal structure 14%
• flat surfaces 11%
• surface energy 5%
• zinc 5%
• retarding 4%
• nucleation 4%
• silicon 3%

Engineering & Materials Science

• Epitaxial growth 70%
• Nanowires 61%
• Crystal structure 24%
• Energy gap 14%
• Substrates 13%
• Interfacial energy 7%
• Optoelectronic devices 7%
• Zinc 6%
• Nucleation 6%
• Silicon 4%

Chemical Compounds

• Epitaxial Growth 60%
• Nanowire 43%
• Hexagonal Space Group 9%
• Band Gap 9%
• Crystal Structure 9%
• Nucleation 5%
• Application 3%