Segregant-induced cavitation of Sn/Cu reactive interface

P. L. Liu; J. K. Shang

doi:10.1016/j.scriptamat.2005.05.033

Segregant-induced cavitation of Sn/Cu reactive interface

P. L. Liu, J. K. Shang

Research output: Contribution to journal › Article › peer-review

Abstract

A dense population of voids was found along the interface between Cu ₃Sn and Cu following prolonged aging. The voids appeared only on the Cu₃Sn/Cu interface that had been covered by roughly monolayer of Bi segregant. Void formation was related to vacancy condensation after the segregant took up vacancy sinks.

Original language	English (US)
Pages (from-to)	631-634
Number of pages	4
Journal	Scripta Materialia
Volume	53
Issue number	6
DOIs	https://doi.org/10.1016/j.scriptamat.2005.05.033
State	Published - Sep 2005
Externally published	Yes

Keywords

Fracture
Interface
Segregation
Soldering

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
General Materials Science

Online availability

10.1016/j.scriptamat.2005.05.033

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title = "Segregant-induced cavitation of Sn/Cu reactive interface",

abstract = "A dense population of voids was found along the interface between Cu 3Sn and Cu following prolonged aging. The voids appeared only on the Cu3Sn/Cu interface that had been covered by roughly monolayer of Bi segregant. Void formation was related to vacancy condensation after the segregant took up vacancy sinks.",

keywords = "Fracture, Interface, Segregation, Soldering",

author = "Liu, {P. L.} and Shang, {J. K.}",

year = "2005",

month = sep,

doi = "10.1016/j.scriptamat.2005.05.033",

language = "English (US)",

volume = "53",

pages = "631--634",

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issn = "1359-6462",

publisher = "Acta Materialia Inc",

number = "6",

}

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T1 - Segregant-induced cavitation of Sn/Cu reactive interface

AU - Liu, P. L.

AU - Shang, J. K.

PY - 2005/9

Y1 - 2005/9

N2 - A dense population of voids was found along the interface between Cu 3Sn and Cu following prolonged aging. The voids appeared only on the Cu3Sn/Cu interface that had been covered by roughly monolayer of Bi segregant. Void formation was related to vacancy condensation after the segregant took up vacancy sinks.

AB - A dense population of voids was found along the interface between Cu 3Sn and Cu following prolonged aging. The voids appeared only on the Cu3Sn/Cu interface that had been covered by roughly monolayer of Bi segregant. Void formation was related to vacancy condensation after the segregant took up vacancy sinks.

KW - Fracture

KW - Interface

KW - Segregation

KW - Soldering

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DO - 10.1016/j.scriptamat.2005.05.033

M3 - Article

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ER -

Segregant-induced cavitation of Sn/Cu reactive interface

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

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