Abstract
We have investigated the lifetime improvements in complementary metal-oxide-semiconductor transistors with nitride sidewalls by the deuterium sintering process. We report the incorporation of deuterium (D) at the gate SiO2/Si interface (overcoming the diffusion barrier of nitride sidewalls) and mean lifetime improvements by a factor of 15. Sintering temperatures ranged from 400 to 480 °C, and the D concentration inside the furnace varied from 10% (in ultra-high purity nitrogen) to 100% with sintering times between 30 and 150 min. We performed secondary ion mass spectrometry to obtain the depth profiles of hydrogen (H) and D in the sintered transistors. The measured D/H concentration ratio at the SiO2/Si interface correlates directly with the sintering parameters and the measured transistor lifetime improvements.
Original language | English (US) |
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Pages (from-to) | 1762-1766 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 16 |
Issue number | 3 |
DOIs | |
State | Published - 1998 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films