Schottky barriers of Ti, Cr, Au, Pd, Ni and Pt on n-type GaN epitaxial layers grown by low-pressure metal-organic chemical vapour deposition on sapphire have been fabricated and characterized. Measurements were carried out using current-voltage (I-V), current-voltage-temperature (I-V-T) and capacitance-voltage (C-V) techniques. A modified Norde plot was used as one of the analysis tools for the I-V-T measurements. The barrier heights, ideality factors and effective Richardson constants are presented. Barrier heights of 0.88, 0.92, 0.99 and 1.08 eV for Au, Pd, Ni and Pt respectively were obtained from the modified Norde plot. Contacts of Ti and Cr exhibited only slightly rectifying characteristics. These results show that the barrier height on n-GaN increases monotonically, but does not scale proportionately, with increasing metal workfunction.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry