Schottky barrier properties of various metals on n-type GaN

A. C. Schmilz; A. T. Ping; M. Asif Khan; Q. Chen; J. W. Yang; I. Adesida

doi:10.1088/0268-1242/11/10/002

Schottky barrier properties of various metals on n-type GaN

A. C. Schmilz, A. T. Ping, M. Asif Khan, Q. Chen, J. W. Yang, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

Schottky barriers of Ti, Cr, Au, Pd, Ni and Pt on n-type GaN epitaxial layers grown by low-pressure metal-organic chemical vapour deposition on sapphire have been fabricated and characterized. Measurements were carried out using current-voltage (I-V), current-voltage-temperature (I-V-T) and capacitance-voltage (C-V) techniques. A modified Norde plot was used as one of the analysis tools for the I-V-T measurements. The barrier heights, ideality factors and effective Richardson constants are presented. Barrier heights of 0.88, 0.92, 0.99 and 1.08 eV for Au, Pd, Ni and Pt respectively were obtained from the modified Norde plot. Contacts of Ti and Cr exhibited only slightly rectifying characteristics. These results show that the barrier height on n-GaN increases monotonically, but does not scale proportionately, with increasing metal workfunction.

Original language	English (US)
Pages (from-to)	1464-1467
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	11
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/11/10/002
State	Published - Oct 1996
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/11/10/002

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title = "Schottky barrier properties of various metals on n-type GaN",

abstract = "Schottky barriers of Ti, Cr, Au, Pd, Ni and Pt on n-type GaN epitaxial layers grown by low-pressure metal-organic chemical vapour deposition on sapphire have been fabricated and characterized. Measurements were carried out using current-voltage (I-V), current-voltage-temperature (I-V-T) and capacitance-voltage (C-V) techniques. A modified Norde plot was used as one of the analysis tools for the I-V-T measurements. The barrier heights, ideality factors and effective Richardson constants are presented. Barrier heights of 0.88, 0.92, 0.99 and 1.08 eV for Au, Pd, Ni and Pt respectively were obtained from the modified Norde plot. Contacts of Ti and Cr exhibited only slightly rectifying characteristics. These results show that the barrier height on n-GaN increases monotonically, but does not scale proportionately, with increasing metal workfunction.",

author = "Schmilz, {A. C.} and Ping, {A. T.} and {Asif Khan}, M. and Q. Chen and Yang, {J. W.} and I. Adesida",

year = "1996",

month = oct,

doi = "10.1088/0268-1242/11/10/002",

language = "English (US)",

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journal = "Semiconductor Science and Technology",

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T1 - Schottky barrier properties of various metals on n-type GaN

AU - Schmilz, A. C.

AU - Ping, A. T.

AU - Asif Khan, M.

AU - Chen, Q.

AU - Yang, J. W.

AU - Adesida, I.

PY - 1996/10

Y1 - 1996/10

N2 - Schottky barriers of Ti, Cr, Au, Pd, Ni and Pt on n-type GaN epitaxial layers grown by low-pressure metal-organic chemical vapour deposition on sapphire have been fabricated and characterized. Measurements were carried out using current-voltage (I-V), current-voltage-temperature (I-V-T) and capacitance-voltage (C-V) techniques. A modified Norde plot was used as one of the analysis tools for the I-V-T measurements. The barrier heights, ideality factors and effective Richardson constants are presented. Barrier heights of 0.88, 0.92, 0.99 and 1.08 eV for Au, Pd, Ni and Pt respectively were obtained from the modified Norde plot. Contacts of Ti and Cr exhibited only slightly rectifying characteristics. These results show that the barrier height on n-GaN increases monotonically, but does not scale proportionately, with increasing metal workfunction.

AB - Schottky barriers of Ti, Cr, Au, Pd, Ni and Pt on n-type GaN epitaxial layers grown by low-pressure metal-organic chemical vapour deposition on sapphire have been fabricated and characterized. Measurements were carried out using current-voltage (I-V), current-voltage-temperature (I-V-T) and capacitance-voltage (C-V) techniques. A modified Norde plot was used as one of the analysis tools for the I-V-T measurements. The barrier heights, ideality factors and effective Richardson constants are presented. Barrier heights of 0.88, 0.92, 0.99 and 1.08 eV for Au, Pd, Ni and Pt respectively were obtained from the modified Norde plot. Contacts of Ti and Cr exhibited only slightly rectifying characteristics. These results show that the barrier height on n-GaN increases monotonically, but does not scale proportionately, with increasing metal workfunction.

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Schottky barrier properties of various metals on n-type GaN

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