Schottky barrier characteristics and interfacial reactions of Ti on n- In0.52 Al0.48 As

Liang Wang; Ilesanmi Adesida

doi:10.1063/1.2756313

Schottky barrier characteristics and interfacial reactions of Ti on n- In0.52 Al0.48 As

Liang Wang, Ilesanmi Adesida

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Abstract

Schottky barrier heights (φB) and ideality factors (n) of TiPtAu diodes on n-InAlAs were characterized. Transmission electron microscopy (TEM) investigations were utilized to correlate the electrical performance with interfacial reactions. The enhancement of φB and increase in n were obtained with increasing annealing temperatures. TEM studies confirmed that amorphous layers were formed at the TiInAlAs interface at short annealing times, while prolonged annealing resulted in the crystallization of TiAs, defective layer formation, and Kirkendall void formation. Such aggressive reactions after prolonged annealing extended deep into the InAlAs and may affect the active region of InAlAsInGaAs -based transistors. The activation energy for this reaction was calculated to be 1.5±0.1 eV.

Original language	English (US)
Article number	022110
Journal	Applied Physics Letters
Volume	91
Issue number	2
DOIs	https://doi.org/10.1063/1.2756313
State	Published - 2007
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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10.1063/1.2756313

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title = "Schottky barrier characteristics and interfacial reactions of Ti on n- In0.52 Al0.48 As",

abstract = "Schottky barrier heights (φB) and ideality factors (n) of TiPtAu diodes on n-InAlAs were characterized. Transmission electron microscopy (TEM) investigations were utilized to correlate the electrical performance with interfacial reactions. The enhancement of φB and increase in n were obtained with increasing annealing temperatures. TEM studies confirmed that amorphous layers were formed at the TiInAlAs interface at short annealing times, while prolonged annealing resulted in the crystallization of TiAs, defective layer formation, and Kirkendall void formation. Such aggressive reactions after prolonged annealing extended deep into the InAlAs and may affect the active region of InAlAsInGaAs -based transistors. The activation energy for this reaction was calculated to be 1.5±0.1 eV.",

author = "Liang Wang and Ilesanmi Adesida",

note = "Funding Information: This work was supported by the NSF ANI (01-21662 ITR) and ONR Grant (N00014-02-10018) (program manager: D. Purdy). TEM analyses were carried out at the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. The assistance of J. G. Wen and C. H. Lei on the TEM is acknowledged.",

year = "2007",

doi = "10.1063/1.2756313",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Schottky barrier characteristics and interfacial reactions of Ti on n- In0.52 Al0.48 As

AU - Wang, Liang

AU - Adesida, Ilesanmi

N1 - Funding Information: This work was supported by the NSF ANI (01-21662 ITR) and ONR Grant (N00014-02-10018) (program manager: D. Purdy). TEM analyses were carried out at the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. The assistance of J. G. Wen and C. H. Lei on the TEM is acknowledged.

PY - 2007

Y1 - 2007

N2 - Schottky barrier heights (φB) and ideality factors (n) of TiPtAu diodes on n-InAlAs were characterized. Transmission electron microscopy (TEM) investigations were utilized to correlate the electrical performance with interfacial reactions. The enhancement of φB and increase in n were obtained with increasing annealing temperatures. TEM studies confirmed that amorphous layers were formed at the TiInAlAs interface at short annealing times, while prolonged annealing resulted in the crystallization of TiAs, defective layer formation, and Kirkendall void formation. Such aggressive reactions after prolonged annealing extended deep into the InAlAs and may affect the active region of InAlAsInGaAs -based transistors. The activation energy for this reaction was calculated to be 1.5±0.1 eV.

AB - Schottky barrier heights (φB) and ideality factors (n) of TiPtAu diodes on n-InAlAs were characterized. Transmission electron microscopy (TEM) investigations were utilized to correlate the electrical performance with interfacial reactions. The enhancement of φB and increase in n were obtained with increasing annealing temperatures. TEM studies confirmed that amorphous layers were formed at the TiInAlAs interface at short annealing times, while prolonged annealing resulted in the crystallization of TiAs, defective layer formation, and Kirkendall void formation. Such aggressive reactions after prolonged annealing extended deep into the InAlAs and may affect the active region of InAlAsInGaAs -based transistors. The activation energy for this reaction was calculated to be 1.5±0.1 eV.

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Schottky barrier characteristics and interfacial reactions of Ti on n- In0.52 Al0.48 As

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