A new and efficient approach is presented for the transient analysis of coupled transmission line structures frequently encountered in microelectronic packaging applications. Frequency-dependent parameters for the transmission lines, as well as nonuniformities in the cross-section of the structures are taken into account. The method is based on the scattering parameter representation of the lossy and/or nonuniform interconnects. An important advantage of this approach compared to previously scattering parameter formulations is that the scattering parameter models have been fully integrated with the standard SPICE models of nonlinear semiconductor devices such as bipolar and CMOS transistors, thus allowing realistic modeling of the driver and receiver circuits terminating the transmission lines. Moreover, measured scattering parameters and non-TEM models can also be included in the simulation. To illustrate the capabilities of this new method, several simulation studies showing the effects of losses and nonuniform interconnect geometries on the propagating signals in transmission line circuits with nonlinear terminations are included in the paper.
|Original language||English (US)|
|Number of pages||8|
|Journal||IEEE Transactions on Components Packaging and Manufacturing Technology Part B|
|State||Published - Nov 1994|
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