Scanning tunneling spectroscopy of epitaxial silver indium diselenide

Pamela Peña Martin; Joseph Lyding; Angus Rockett

doi:10.1016/j.susc.2015.01.012

Scanning tunneling spectroscopy of epitaxial silver indium diselenide

Pamela Peña Martin, Joseph Lyding, Angus Rockett

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the measurement of the electronic properties of (112) AgInSe₂ (AIS) by scanning tunneling microscopy (STM) and spectroscopy (STS). Current-voltage STS measurements show an average band gap of about 1.3 eV and n-type behavior. The IV data also shows band edge fluctuations and a region of states near the valence band edge that decay well into the gap. We compare STS determined band fluctuations in AIS to those previously measured in CuInSe₂ (CIS) and find that the fluctuations are smaller in scale in AIS than CIS.

Original language	English (US)
Pages (from-to)	8-12
Number of pages	5
Journal	Surface Science
Volume	636
DOIs	https://doi.org/10.1016/j.susc.2015.01.012
State	Published - Jun 2015

Keywords

Scanning tunneling microscopy
Scanning tunneling spectroscopy
Thin films

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Online availability

10.1016/j.susc.2015.01.012

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title = "Scanning tunneling spectroscopy of epitaxial silver indium diselenide",

abstract = "We report on the measurement of the electronic properties of (112) AgInSe2 (AIS) by scanning tunneling microscopy (STM) and spectroscopy (STS). Current-voltage STS measurements show an average band gap of about 1.3 eV and n-type behavior. The IV data also shows band edge fluctuations and a region of states near the valence band edge that decay well into the gap. We compare STS determined band fluctuations in AIS to those previously measured in CuInSe2 (CIS) and find that the fluctuations are smaller in scale in AIS than CIS.",

keywords = "Scanning tunneling microscopy, Scanning tunneling spectroscopy, Thin films",

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month = jun,

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language = "English (US)",

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journal = "Surface Science",

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T1 - Scanning tunneling spectroscopy of epitaxial silver indium diselenide

AU - Peña Martin, Pamela

AU - Lyding, Joseph

AU - Rockett, Angus

PY - 2015/6

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N2 - We report on the measurement of the electronic properties of (112) AgInSe2 (AIS) by scanning tunneling microscopy (STM) and spectroscopy (STS). Current-voltage STS measurements show an average band gap of about 1.3 eV and n-type behavior. The IV data also shows band edge fluctuations and a region of states near the valence band edge that decay well into the gap. We compare STS determined band fluctuations in AIS to those previously measured in CuInSe2 (CIS) and find that the fluctuations are smaller in scale in AIS than CIS.

AB - We report on the measurement of the electronic properties of (112) AgInSe2 (AIS) by scanning tunneling microscopy (STM) and spectroscopy (STS). Current-voltage STS measurements show an average band gap of about 1.3 eV and n-type behavior. The IV data also shows band edge fluctuations and a region of states near the valence band edge that decay well into the gap. We compare STS determined band fluctuations in AIS to those previously measured in CuInSe2 (CIS) and find that the fluctuations are smaller in scale in AIS than CIS.

KW - Scanning tunneling microscopy

KW - Scanning tunneling spectroscopy

KW - Thin films

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JO - Surface Science

JF - Surface Science

ER -

Scanning tunneling spectroscopy of epitaxial silver indium diselenide

Abstract

Keywords

ASJC Scopus subject areas

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