Scanning tunneling spectroscopy of epitaxial silver indium diselenide

Pamela Peña Martin, Joseph Lyding, Angus Rockett

Research output: Contribution to journalArticle

Abstract

We report on the measurement of the electronic properties of (112) AgInSe2 (AIS) by scanning tunneling microscopy (STM) and spectroscopy (STS). Current-voltage STS measurements show an average band gap of about 1.3 eV and n-type behavior. The IV data also shows band edge fluctuations and a region of states near the valence band edge that decay well into the gap. We compare STS determined band fluctuations in AIS to those previously measured in CuInSe2 (CIS) and find that the fluctuations are smaller in scale in AIS than CIS.

Original languageEnglish (US)
Pages (from-to)8-12
Number of pages5
JournalSurface Science
Volume636
DOIs
StatePublished - Jun 2015

Fingerprint

Indium
Silver
indium
silver
Spectroscopy
Scanning
scanning
spectroscopy
Scanning tunneling microscopy
Valence bands
Electronic properties
Energy gap
scanning tunneling microscopy
Electric potential
valence
electric potential
decay
electronics

Keywords

  • Scanning tunneling microscopy
  • Scanning tunneling spectroscopy
  • Thin films

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Scanning tunneling spectroscopy of epitaxial silver indium diselenide. / Peña Martin, Pamela; Lyding, Joseph; Rockett, Angus.

In: Surface Science, Vol. 636, 06.2015, p. 8-12.

Research output: Contribution to journalArticle

Peña Martin, Pamela ; Lyding, Joseph ; Rockett, Angus. / Scanning tunneling spectroscopy of epitaxial silver indium diselenide. In: Surface Science. 2015 ; Vol. 636. pp. 8-12.
@article{1081e453990c401aa711c7d489dc48e0,
title = "Scanning tunneling spectroscopy of epitaxial silver indium diselenide",
abstract = "We report on the measurement of the electronic properties of (112) AgInSe2 (AIS) by scanning tunneling microscopy (STM) and spectroscopy (STS). Current-voltage STS measurements show an average band gap of about 1.3 eV and n-type behavior. The IV data also shows band edge fluctuations and a region of states near the valence band edge that decay well into the gap. We compare STS determined band fluctuations in AIS to those previously measured in CuInSe2 (CIS) and find that the fluctuations are smaller in scale in AIS than CIS.",
keywords = "Scanning tunneling microscopy, Scanning tunneling spectroscopy, Thin films",
author = "{Pe{\~n}a Martin}, Pamela and Joseph Lyding and Angus Rockett",
year = "2015",
month = "6",
doi = "10.1016/j.susc.2015.01.012",
language = "English (US)",
volume = "636",
pages = "8--12",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",

}

TY - JOUR

T1 - Scanning tunneling spectroscopy of epitaxial silver indium diselenide

AU - Peña Martin, Pamela

AU - Lyding, Joseph

AU - Rockett, Angus

PY - 2015/6

Y1 - 2015/6

N2 - We report on the measurement of the electronic properties of (112) AgInSe2 (AIS) by scanning tunneling microscopy (STM) and spectroscopy (STS). Current-voltage STS measurements show an average band gap of about 1.3 eV and n-type behavior. The IV data also shows band edge fluctuations and a region of states near the valence band edge that decay well into the gap. We compare STS determined band fluctuations in AIS to those previously measured in CuInSe2 (CIS) and find that the fluctuations are smaller in scale in AIS than CIS.

AB - We report on the measurement of the electronic properties of (112) AgInSe2 (AIS) by scanning tunneling microscopy (STM) and spectroscopy (STS). Current-voltage STS measurements show an average band gap of about 1.3 eV and n-type behavior. The IV data also shows band edge fluctuations and a region of states near the valence band edge that decay well into the gap. We compare STS determined band fluctuations in AIS to those previously measured in CuInSe2 (CIS) and find that the fluctuations are smaller in scale in AIS than CIS.

KW - Scanning tunneling microscopy

KW - Scanning tunneling spectroscopy

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=84922683798&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84922683798&partnerID=8YFLogxK

U2 - 10.1016/j.susc.2015.01.012

DO - 10.1016/j.susc.2015.01.012

M3 - Article

AN - SCOPUS:84922683798

VL - 636

SP - 8

EP - 12

JO - Surface Science

JF - Surface Science

SN - 0039-6028

ER -