Scanning tunneling spectroscopy of epitaxial silver indium diselenide

Pamela Peña Martin, Joseph Lyding, Angus Rockett

Research output: Contribution to journalArticle

Abstract

We report on the measurement of the electronic properties of (112) AgInSe2 (AIS) by scanning tunneling microscopy (STM) and spectroscopy (STS). Current-voltage STS measurements show an average band gap of about 1.3 eV and n-type behavior. The IV data also shows band edge fluctuations and a region of states near the valence band edge that decay well into the gap. We compare STS determined band fluctuations in AIS to those previously measured in CuInSe2 (CIS) and find that the fluctuations are smaller in scale in AIS than CIS.

Original languageEnglish (US)
Pages (from-to)8-12
Number of pages5
JournalSurface Science
Volume636
DOIs
StatePublished - Jun 2015

Keywords

  • Scanning tunneling microscopy
  • Scanning tunneling spectroscopy
  • Thin films

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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