Scanning tunneling spectroscopy and density functional calculation of silicon dangling bonds on the Si(100)-2 × 1:H surface

Wei Ye, Kyoungmin Min, Pamela Peña Martin, Angus Rockett, Narayana R Aluru, Joseph W Lyding

Research output: Contribution to journalArticle

Abstract

We studied electronic properties of atomic-scale dangling bond (DB) and DB wires on Si(100)-2 × 1:H surfaces using a ultrahigh vacuum scanning tunneling microscope (UHV-STM). The decay of the near-midgap DB-states induced by an unpaired DB depends on the crystalline orientation of the Si(100) surface. The decay length of the DB-states of an unpaired DB wire can be ∼ 2.5 nm along the dimer row direction. The perturbation from an unpaired DB to an adjacent paired DB is also demonstrated. The results are in good agreement with density functional calculations.

Original languageEnglish (US)
Pages (from-to)147-151
Number of pages5
JournalSurface Science
Volume609
DOIs
StatePublished - Mar 1 2013

Fingerprint

Dangling bonds
Silicon
Density functional theory
Spectroscopy
wire
Scanning
scanning
silicon
decay
spectroscopy
ultrahigh vacuum
microscopes
dimers
perturbation
electronics
Wire
Ultrahigh vacuum
Crystal orientation
Electronic properties
Dimers

Keywords

  • Dangling bond wire
  • Density functional calculations
  • Hydrogen passivated silicon
  • Scanning tunneling spectroscopy
  • Si(100) surface
  • Silicon dangling bond
  • UHV-STM

ASJC Scopus subject areas

  • Surfaces and Interfaces
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films

Cite this

Scanning tunneling spectroscopy and density functional calculation of silicon dangling bonds on the Si(100)-2 × 1:H surface. / Ye, Wei; Min, Kyoungmin; Peña Martin, Pamela; Rockett, Angus; Aluru, Narayana R; Lyding, Joseph W.

In: Surface Science, Vol. 609, 01.03.2013, p. 147-151.

Research output: Contribution to journalArticle

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