Abstract

We studied electronic properties of atomic-scale dangling bond (DB) and DB wires on Si(100)-2 × 1:H surfaces using a ultrahigh vacuum scanning tunneling microscope (UHV-STM). The decay of the near-midgap DB-states induced by an unpaired DB depends on the crystalline orientation of the Si(100) surface. The decay length of the DB-states of an unpaired DB wire can be ∼ 2.5 nm along the dimer row direction. The perturbation from an unpaired DB to an adjacent paired DB is also demonstrated. The results are in good agreement with density functional calculations.

Original languageEnglish (US)
Pages (from-to)147-151
Number of pages5
JournalSurface Science
Volume609
DOIs
StatePublished - Mar 2013

Keywords

  • Dangling bond wire
  • Density functional calculations
  • Hydrogen passivated silicon
  • Scanning tunneling spectroscopy
  • Si(100) surface
  • Silicon dangling bond
  • UHV-STM

ASJC Scopus subject areas

  • Surfaces and Interfaces
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films

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