Scanning tunneling microscopy of step bunching on vicinal GaAs(100) annealed at high temperatures

S. L. Skala, S. T. Chou, K. Y. Cheng, J. R. Tucker, J. W. Lyding

Research output: Contribution to journalArticle

Abstract

Step bunching and terrace widening are observed with scanning tunneling microscopy on GaAs(100), tilted 2°toward [1̄10] and [110], after annealing in ultrahigh vacuum at 600°C. The resulting surface consists of two separate phases, c(8×2) reconstructed terraces and a bunched step region that is either amorphous or (2×6) reconstructed. Average terrace widths increase to 2 or 4 times the nominal average terrace width for a 2°miscut and steps are correspondingly compressed by 40% or 75% depending on the misorientation direction. The observed step bunching is explained by a thermodynamic instability against facetting resulting from a high step energy on c(8×2) reconstructed surfaces.

Original languageEnglish (US)
Pages (from-to)722-724
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number6
DOIs
StatePublished - Dec 1 1994

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bunching
scanning tunneling microscopy
misalignment
ultrahigh vacuum
thermodynamics
annealing
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Scanning tunneling microscopy of step bunching on vicinal GaAs(100) annealed at high temperatures. / Skala, S. L.; Chou, S. T.; Cheng, K. Y.; Tucker, J. R.; Lyding, J. W.

In: Applied Physics Letters, Vol. 65, No. 6, 01.12.1994, p. 722-724.

Research output: Contribution to journalArticle

Skala, S. L. ; Chou, S. T. ; Cheng, K. Y. ; Tucker, J. R. ; Lyding, J. W. / Scanning tunneling microscopy of step bunching on vicinal GaAs(100) annealed at high temperatures. In: Applied Physics Letters. 1994 ; Vol. 65, No. 6. pp. 722-724.
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