Scanning tunneling microscopy observation of single dangling bonds on the Si(100)2×1:H surface

Lequn Liu, Jixin Yu, Joseph W. Lyding

Research output: Contribution to journalConference articlepeer-review

Abstract

The electrical properties of single dangling bonds on the Si(100)2×1:H surface are investigated by ultra high vacuum scanning tunneling microscopy. On the N-type Si(100)2×1:H surface, single dangling bonds created by feedback controlled lithography and natural dangling bonds have a fixed negative charge. On the other hand, they are observed as neutral on the P-type Si(100)2×1:H surface. Current image tunneling spectroscopy is used to characterize both types of dangling bonds. The dangling bonds with fixed negative charge display a dramatic voltage dependence with Friedel oscillations observed in the empty state images. The neutral dangling bonds appear as protrusions in both the empty and filled state images.

Original languageEnglish (US)
Pages (from-to)187-192
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume705
StatePublished - Jan 1 2002
EventNanopatterning-Form ultralarge-Scale Integration to Biotechnology - Boston, MA, United States
Duration: Nov 25 2001Nov 29 2001

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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