Scanning tunneling microscopy as a probe of defects iN CuInSe2

Marie Mayer, Pamela Martin, Joseph W Lyding, Angus Rockett

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A variety of analyses of CuInSe2 have been performed using scanning tunneling microscopy. However, most of them fail to produce atomic resolution images. Our experimental data obtained on epitaxial thin films with various surface orientations and surface preparation methods suggest that this is not due to experimental errors. Scanning on adjacent GaAs surfaces reveals clear atomic resolution images. The results are interpreted as due to buried point defects in the material. Unlike the surface topography images, current-imaging tunneling spectroscopy data reveals features varying with atomic resolution. Furthermore the spectroscopy data shows changes in effective band edge positions significantly greater than are observed by optical measurements. These are proposed to be real band edge variations, which are screened electrostatically in optical measurements, which average over the exciton radius.

Original languageEnglish (US)
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages233-238
Number of pages6
DOIs
StatePublished - Dec 20 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: Jun 20 2010Jun 25 2010

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period6/20/106/25/10

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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