Scanning tunneling microscopy as a probe of defects iN CuInSe2

Marie Mayer; Pamela Martin; Joseph Lyding; Angus A. Rockett

doi:10.1109/PVSC.2010.5614487

Scanning tunneling microscopy as a probe of defects iN CuInSe₂

Marie Mayer, Pamela Martin, Joseph Lyding, Angus A. Rockett

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A variety of analyses of CuInSe₂ have been performed using scanning tunneling microscopy. However, most of them fail to produce atomic resolution images. Our experimental data obtained on epitaxial thin films with various surface orientations and surface preparation methods suggest that this is not due to experimental errors. Scanning on adjacent GaAs surfaces reveals clear atomic resolution images. The results are interpreted as due to buried point defects in the material. Unlike the surface topography images, current-imaging tunneling spectroscopy data reveals features varying with atomic resolution. Furthermore the spectroscopy data shows changes in effective band edge positions significantly greater than are observed by optical measurements. These are proposed to be real band edge variations, which are screened electrostatically in optical measurements, which average over the exciton radius.

Original language	English (US)
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	233-238
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2010.5614487
State	Published - 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: Jun 20 2010 → Jun 25 2010

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	6/20/10 → 6/25/10

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Online availability

10.1109/PVSC.2010.5614487

Library availability

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Cite this

Mayer, M, Martin, P, Lyding, J & Rockett, AA 2010, Scanning tunneling microscopy as a probe of defects iN CuInSe₂. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614487, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 233-238, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5614487

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