Scanning tunneling microscope stimulated oxidation of silicon (100) surfaces

P. Fay, R. T. Brockenbrough, G. Abeln, P. Scott, S. Agarwala, I. Adesida, J. W. Lyding

Research output: Contribution to journalArticlepeer-review


The chemical modification of n- and p-type hydrogen-passivated Si(100) surfaces by a scanning tunneling microscope (STM) is reported. The modified areas have been examined with STM, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Comparison of these characterization techniques indicates the features are both chemical and topographic in nature and are the result of local oxidation of the substrate. In addition, pattern transfer for the defined regions has been demonstrated with both thermal oxidation and HBr reactive-ion etching.

Original languageEnglish (US)
Pages (from-to)7545-7549
Number of pages5
JournalJournal of Applied Physics
Issue number11
StatePublished - 1994

ASJC Scopus subject areas

  • General Physics and Astronomy


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