Abstract
The scanning tunneling microscope (STM) has evolved from a new surface science tool into one capable of performing surface modifications down to nanometer and even atomic dimensions. This suggests the possibility of developing STM-based lithography strategies for the fabrication of electronic device structures with nanometer scale features. On this size scale, it should be possible for quantum interference and coulomb charging effects to influence device function at 77 K or even higher temperatures. This chapter reviews our progress towards merging STM nanolithography with conventional processing technologies to create devices whose electronic function depends on their nanofabricated features. We have successfully patterned the gate regions of silicon MOSFET devices which were fabricated with provisions for STM modification.
| Original language | English (US) |
|---|---|
| Article number | 1031008 |
| Pages (from-to) | 111-126 |
| Number of pages | 16 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 10310 |
| DOIs | |
| State | Published - Oct 3 1993 |
| Event | Technology of Proximal Probe Lithography 1993 - Bellingham, United States Duration: Oct 3 1993 → … |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering