Scaling properties in transistors that use aligned arrays of single-walled carbon nanotubes

Xinning Ho, Lina Ye, Slava V. Rotkin, Qing Cao, Sakulsuk Unarunotai, Shuaib Salamat, Muhammad A. Alam, John A. Rogers

Research output: Contribution to journalArticle

Abstract

Recent studies and device demonstrations indicate that horizontally aligned arrays of linearly configured single-walled carbon nanotubes (SWNTs) can serve as an effective thin film semiconductor material, suitable for scalable use in high-performance transistors. This paper presents the results of systematic investigations of the dependence of device properties on channel length, to reveal the role of channel and contact resistance in the operation. The results indicate that, for the range of channel lengths and SWNT diameters studied here, source and drain contacts of Pd yield transistors with effectively Ohmlc contacts that exhibit negligible dependence of their resistances on gate voltage, For devices that use Au, modulation of the resistance of the contacts represents a significant contribution to the response, Extracted values of the mobilities of the semiconducting SWNTs and the contact resistances associated with metallic and semiconducting SWNTs are consistent with previous reports on single tube test structures.

Original languageEnglish (US)
Pages (from-to)499-503
Number of pages5
JournalNano letters
Volume10
Issue number2
DOIs
StatePublished - Feb 10 2010

Fingerprint

Single-walled carbon nanotubes (SWCN)
Transistors
transistors
carbon nanotubes
scaling
Contact resistance
contact resistance
Demonstrations
Modulation
Semiconductor materials
tubes
modulation
Thin films
Electric potential
electric potential
thin films

Keywords

  • Carbon nanotube
  • Gigahertz
  • Quartz
  • Radio frequency
  • Transistor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Ho, X., Ye, L., Rotkin, S. V., Cao, Q., Unarunotai, S., Salamat, S., ... Rogers, J. A. (2010). Scaling properties in transistors that use aligned arrays of single-walled carbon nanotubes. Nano letters, 10(2), 499-503. https://doi.org/10.1021/nl903281v

Scaling properties in transistors that use aligned arrays of single-walled carbon nanotubes. / Ho, Xinning; Ye, Lina; Rotkin, Slava V.; Cao, Qing; Unarunotai, Sakulsuk; Salamat, Shuaib; Alam, Muhammad A.; Rogers, John A.

In: Nano letters, Vol. 10, No. 2, 10.02.2010, p. 499-503.

Research output: Contribution to journalArticle

Ho, X, Ye, L, Rotkin, SV, Cao, Q, Unarunotai, S, Salamat, S, Alam, MA & Rogers, JA 2010, 'Scaling properties in transistors that use aligned arrays of single-walled carbon nanotubes', Nano letters, vol. 10, no. 2, pp. 499-503. https://doi.org/10.1021/nl903281v
Ho, Xinning ; Ye, Lina ; Rotkin, Slava V. ; Cao, Qing ; Unarunotai, Sakulsuk ; Salamat, Shuaib ; Alam, Muhammad A. ; Rogers, John A. / Scaling properties in transistors that use aligned arrays of single-walled carbon nanotubes. In: Nano letters. 2010 ; Vol. 10, No. 2. pp. 499-503.
@article{b8e453d006014e9a890e6fdd62001f3f,
title = "Scaling properties in transistors that use aligned arrays of single-walled carbon nanotubes",
abstract = "Recent studies and device demonstrations indicate that horizontally aligned arrays of linearly configured single-walled carbon nanotubes (SWNTs) can serve as an effective thin film semiconductor material, suitable for scalable use in high-performance transistors. This paper presents the results of systematic investigations of the dependence of device properties on channel length, to reveal the role of channel and contact resistance in the operation. The results indicate that, for the range of channel lengths and SWNT diameters studied here, source and drain contacts of Pd yield transistors with effectively Ohmlc contacts that exhibit negligible dependence of their resistances on gate voltage, For devices that use Au, modulation of the resistance of the contacts represents a significant contribution to the response, Extracted values of the mobilities of the semiconducting SWNTs and the contact resistances associated with metallic and semiconducting SWNTs are consistent with previous reports on single tube test structures.",
keywords = "Carbon nanotube, Gigahertz, Quartz, Radio frequency, Transistor",
author = "Xinning Ho and Lina Ye and Rotkin, {Slava V.} and Qing Cao and Sakulsuk Unarunotai and Shuaib Salamat and Alam, {Muhammad A.} and Rogers, {John A.}",
year = "2010",
month = "2",
day = "10",
doi = "10.1021/nl903281v",
language = "English (US)",
volume = "10",
pages = "499--503",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "2",

}

TY - JOUR

T1 - Scaling properties in transistors that use aligned arrays of single-walled carbon nanotubes

AU - Ho, Xinning

AU - Ye, Lina

AU - Rotkin, Slava V.

AU - Cao, Qing

AU - Unarunotai, Sakulsuk

AU - Salamat, Shuaib

AU - Alam, Muhammad A.

AU - Rogers, John A.

PY - 2010/2/10

Y1 - 2010/2/10

N2 - Recent studies and device demonstrations indicate that horizontally aligned arrays of linearly configured single-walled carbon nanotubes (SWNTs) can serve as an effective thin film semiconductor material, suitable for scalable use in high-performance transistors. This paper presents the results of systematic investigations of the dependence of device properties on channel length, to reveal the role of channel and contact resistance in the operation. The results indicate that, for the range of channel lengths and SWNT diameters studied here, source and drain contacts of Pd yield transistors with effectively Ohmlc contacts that exhibit negligible dependence of their resistances on gate voltage, For devices that use Au, modulation of the resistance of the contacts represents a significant contribution to the response, Extracted values of the mobilities of the semiconducting SWNTs and the contact resistances associated with metallic and semiconducting SWNTs are consistent with previous reports on single tube test structures.

AB - Recent studies and device demonstrations indicate that horizontally aligned arrays of linearly configured single-walled carbon nanotubes (SWNTs) can serve as an effective thin film semiconductor material, suitable for scalable use in high-performance transistors. This paper presents the results of systematic investigations of the dependence of device properties on channel length, to reveal the role of channel and contact resistance in the operation. The results indicate that, for the range of channel lengths and SWNT diameters studied here, source and drain contacts of Pd yield transistors with effectively Ohmlc contacts that exhibit negligible dependence of their resistances on gate voltage, For devices that use Au, modulation of the resistance of the contacts represents a significant contribution to the response, Extracted values of the mobilities of the semiconducting SWNTs and the contact resistances associated with metallic and semiconducting SWNTs are consistent with previous reports on single tube test structures.

KW - Carbon nanotube

KW - Gigahertz

KW - Quartz

KW - Radio frequency

KW - Transistor

UR - http://www.scopus.com/inward/record.url?scp=76749152409&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76749152409&partnerID=8YFLogxK

U2 - 10.1021/nl903281v

DO - 10.1021/nl903281v

M3 - Article

C2 - 20050675

AN - SCOPUS:76749152409

VL - 10

SP - 499

EP - 503

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 2

ER -