Scaling of Device Variability and Subthreshold Swing in Ballistic Carbon Nanotube Transistors

Keyphrases

• Ballistic 100%
• Ballistic Transistor 33%
• Carbon Nanotube Transistor 100%
• Device Dimensions 66%
• Device Physics 33%
• Device Uniformity 33%
• Device Variability 100%
• Dopant 33%
• Field-effect Transistors 33%
• Fixed Charge Density 66%
• Gate Dielectric 66%
• Gate Oxide 66%
• Improved Control 33%
• Large-scale Integration 33%
• Nanotube Devices 33%
• Nanotube Transistor 33%
• One-dimensional Channels 33%
• Oxide Surfaces 33%
• Performance Making 33%
• Practical Technology 33%
• Quasi-one-dimensional 66%
• Scale Control 33%
• Scaled Device 33%
• Silicon Transistor 33%
• Single Charge 33%
• Subthreshold Swing 100%
• Transistor 33%

Engineering

• Carbon Nanotube 100%
• Charge Density 66%
• Dopants 33%
• Experimental Result 33%
• Field-Effect Transistor 33%
• Gate Dielectric 66%
• Gate Oxide 66%
• Good Agreement 33%
• Inherent Randomness 33%
• LSI Circuits 33%
• Major Factor 33%
• Nanotube 66%
• One Dimensional 100%
• Simulation Result 33%

Material Science

• Carbon Nanotube 100%
• Density 28%
• Dielectric Material 28%
• Doping (Additives) 14%
• Field Effect Transistor 14%
• Nanotube 14%
• Nanotube Based Device 14%
• Oxide Compound 14%
• Oxide Surface 14%
• Silicon 14%
• Transistor 100%