Abstract

Conventional junctionless (JL) multigate field-effect transistors (MuGFETs) use extremely scaled and highly doped fins as channels. Such small fins introduce large parasitic resistance as well as performance fluctuation due to fin width variations. The high channel doping significantly reduces bulk carrier mobility, which reduces on-state current and escalates short channel effect related leakage. In this letter, we present a step-doping scheme for the scaling of JL MuGFETs. By employing a two-step-doping profile, with the high doping side near the gate, higher threshold voltage and better off-state performance can be achieved, along with higher on-state current. This opens a route for threshold voltage design and addresses the design optimization for both on-state current and off-state leakage for JL MuGFETs.

Original languageEnglish (US)
Article number223506
JournalApplied Physics Letters
Volume105
Issue number22
DOIs
StatePublished - Dec 1 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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