Scaling in back-illuminated GaN avalanche photodiodes

K. Minder, J. L. Pau, R. McClintock, P. Kung, C. Bayram, M. Razeghi, D. Silversmith

Research output: Contribution to journalArticlepeer-review

Abstract

Avalanche p-i-n photodiodes of various mesa areas were fabricated on AlN templates for back illumination for enhanced performance through hole-initiated multiplication, and the effects of increased area on device performance were studied. Avalanche multiplication was observed in mesa sizes up to 14 063 μ m2 under linear mode operation. Uniform gain and a linear increase of the dark current with area were demonstrated.

Original languageEnglish (US)
Article number073513
JournalApplied Physics Letters
Volume91
Issue number7
DOIs
StatePublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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