Scaling in back-illuminated GaN avalanche photodiodes

K. Minder; J. L. Pau; R. McClintock; P. Kung; C. Bayram; M. Razeghi; D. Silversmith

doi:10.1063/1.2772199

Scaling in back-illuminated GaN avalanche photodiodes

K. Minder, J. L. Pau, R. McClintock, P. Kung, C. Bayram, M. Razeghi, D. Silversmith

Research output: Contribution to journal › Article › peer-review

Abstract

Avalanche p-i-n photodiodes of various mesa areas were fabricated on AlN templates for back illumination for enhanced performance through hole-initiated multiplication, and the effects of increased area on device performance were studied. Avalanche multiplication was observed in mesa sizes up to 14 063 μ m2 under linear mode operation. Uniform gain and a linear increase of the dark current with area were demonstrated.

Original language	English (US)
Article number	073513
Journal	Applied Physics Letters
Volume	91
Issue number	7
DOIs	https://doi.org/10.1063/1.2772199
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2772199

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title = "Scaling in back-illuminated GaN avalanche photodiodes",

abstract = "Avalanche p-i-n photodiodes of various mesa areas were fabricated on AlN templates for back illumination for enhanced performance through hole-initiated multiplication, and the effects of increased area on device performance were studied. Avalanche multiplication was observed in mesa sizes up to 14 063 μ m2 under linear mode operation. Uniform gain and a linear increase of the dark current with area were demonstrated.",

author = "K. Minder and Pau, {J. L.} and R. McClintock and P. Kung and C. Bayram and M. Razeghi and D. Silversmith",

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AU - Pau, J. L.

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AU - Kung, P.

AU - Bayram, C.

AU - Razeghi, M.

AU - Silversmith, D.

N1 - Funding Information: The authors acknowledge the Motorola University Partnership in Research Program for supporting one of the authors (K.M.), the Fulbright Association and the Spanish Ministry of Education and Science for supporting another author (J.L.P.), and the Richter Trust for supporting another author (R.M.).

PY - 2007

Y1 - 2007

N2 - Avalanche p-i-n photodiodes of various mesa areas were fabricated on AlN templates for back illumination for enhanced performance through hole-initiated multiplication, and the effects of increased area on device performance were studied. Avalanche multiplication was observed in mesa sizes up to 14 063 μ m2 under linear mode operation. Uniform gain and a linear increase of the dark current with area were demonstrated.

AB - Avalanche p-i-n photodiodes of various mesa areas were fabricated on AlN templates for back illumination for enhanced performance through hole-initiated multiplication, and the effects of increased area on device performance were studied. Avalanche multiplication was observed in mesa sizes up to 14 063 μ m2 under linear mode operation. Uniform gain and a linear increase of the dark current with area were demonstrated.

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Scaling in back-illuminated GaN avalanche photodiodes

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