Avalanche p-i-n photodiodes of various mesa areas were fabricated on AlN templates for back illumination for enhanced performance through hole-initiated multiplication, and the effects of increased area on device performance were studied. Avalanche multiplication was observed in mesa sizes up to 14 063 μ m2 under linear mode operation. Uniform gain and a linear increase of the dark current with area were demonstrated.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - 2007|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)