Scaling AlGaN/GaN high electron mobility transistor structures onto 200-mm silicon (111) substrates through novel buffer layer configurations

H. P. Lee; J. Perozek; C. Bayram

Scaling AlGaN/GaN high electron mobility transistor structures onto 200-mm silicon (111) substrates through novel buffer layer configurations

H. P. Lee, J. Perozek, C. Bayram

Research output: Contribution to conference › Paper › peer-review

Abstract

Crack-free and low-bow (< 50 μm) AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1-xN}/AlN, (b) Thin-GaN/3 × {AlxGa1-xN}/AlN, and (c) Thin-GaN/AlN. Optical, structural, and electrical properties of these AlGaN/GaN HEMT structures are reported. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and concentration are studied. We show that the in-plane stress type and magnitude significantly affect the 2DEG characteristic, suggesting the importance of optimal buffer layer configurations for AlGaN/GaN HEMTs on Si(111) substrates.

Original language	English (US)
State	Published - 2017
Event	2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 - Indian Wells, United States Duration: May 22 2017 → May 25 2017

Other

Other	2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017
Country/Territory	United States
City	Indian Wells
Period	5/22/17 → 5/25/17

Keywords

AlGaN
Defectivity
High electron mobility transistor
Si
Strain
Two-dimensional electron gas

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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Scaling AlGaN/GaN high electron mobility transistor structures onto 200-mm silicon (111) substrates through novel buffer layer configurations. / Lee, H. P.; Perozek, J.; Bayram, C.
2017. Paper presented at 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017, Indian Wells, United States.

Research output: Contribution to conference › Paper › peer-review

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title = "Scaling AlGaN/GaN high electron mobility transistor structures onto 200-mm silicon (111) substrates through novel buffer layer configurations",

abstract = "Crack-free and low-bow (< 50 μm) AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1-xN}/AlN, (b) Thin-GaN/3 × {AlxGa1-xN}/AlN, and (c) Thin-GaN/AlN. Optical, structural, and electrical properties of these AlGaN/GaN HEMT structures are reported. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and concentration are studied. We show that the in-plane stress type and magnitude significantly affect the 2DEG characteristic, suggesting the importance of optimal buffer layer configurations for AlGaN/GaN HEMTs on Si(111) substrates.",

keywords = "AlGaN, Defectivity, High electron mobility transistor, Si, Strain, Two-dimensional electron gas",

author = "Lee, {H. P.} and J. Perozek and C. Bayram",

note = "Funding Information: This work was partially supported by the Air Force Office of Scientific Research (AFOSR) through Young Investigator Program Grant FA9550-16-1-0224 and was carried out in the Micro and Nanotechnology Laboratory and Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois at Urbana-Champaign, IL, USA.; 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 ; Conference date: 22-05-2017 Through 25-05-2017",

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T1 - Scaling AlGaN/GaN high electron mobility transistor structures onto 200-mm silicon (111) substrates through novel buffer layer configurations

AU - Lee, H. P.

AU - Perozek, J.

AU - Bayram, C.

N1 - Funding Information: This work was partially supported by the Air Force Office of Scientific Research (AFOSR) through Young Investigator Program Grant FA9550-16-1-0224 and was carried out in the Micro and Nanotechnology Laboratory and Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois at Urbana-Champaign, IL, USA.

PY - 2017

Y1 - 2017

N2 - Crack-free and low-bow (< 50 μm) AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1-xN}/AlN, (b) Thin-GaN/3 × {AlxGa1-xN}/AlN, and (c) Thin-GaN/AlN. Optical, structural, and electrical properties of these AlGaN/GaN HEMT structures are reported. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and concentration are studied. We show that the in-plane stress type and magnitude significantly affect the 2DEG characteristic, suggesting the importance of optimal buffer layer configurations for AlGaN/GaN HEMTs on Si(111) substrates.

AB - Crack-free and low-bow (< 50 μm) AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1-xN}/AlN, (b) Thin-GaN/3 × {AlxGa1-xN}/AlN, and (c) Thin-GaN/AlN. Optical, structural, and electrical properties of these AlGaN/GaN HEMT structures are reported. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and concentration are studied. We show that the in-plane stress type and magnitude significantly affect the 2DEG characteristic, suggesting the importance of optimal buffer layer configurations for AlGaN/GaN HEMTs on Si(111) substrates.

KW - AlGaN

KW - Defectivity

KW - High electron mobility transistor

KW - Si

KW - Strain

KW - Two-dimensional electron gas

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M3 - Paper

AN - SCOPUS:85029525594

T2 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017

Y2 - 22 May 2017 through 25 May 2017

ER -

Scaling AlGaN/GaN high electron mobility transistor structures onto 200-mm silicon (111) substrates through novel buffer layer configurations

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