Scaling AlGaN/GaN high electron mobility transistor structures onto 200-mm silicon (111) substrates through novel buffer layer configurations

H. P. Lee, J. Perozek, C. Bayram

Research output: Contribution to conferencePaper

Abstract

Crack-free and low-bow (< 50 μm) AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1-xN}/AlN, (b) Thin-GaN/3 × {AlxGa1-xN}/AlN, and (c) Thin-GaN/AlN. Optical, structural, and electrical properties of these AlGaN/GaN HEMT structures are reported. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and concentration are studied. We show that the in-plane stress type and magnitude significantly affect the 2DEG characteristic, suggesting the importance of optimal buffer layer configurations for AlGaN/GaN HEMTs on Si(111) substrates.

Original languageEnglish (US)
StatePublished - Jan 1 2017
Event2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 - Indian Wells, United States
Duration: May 22 2017May 25 2017

Other

Other2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017
CountryUnited States
CityIndian Wells
Period5/22/175/25/17

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Keywords

  • AlGaN
  • Defectivity
  • High electron mobility transistor
  • Si
  • Strain
  • Two-dimensional electron gas

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Lee, H. P., Perozek, J., & Bayram, C. (2017). Scaling AlGaN/GaN high electron mobility transistor structures onto 200-mm silicon (111) substrates through novel buffer layer configurations. Paper presented at 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017, Indian Wells, United States.