Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb

Honggyu Kim, Yifei Meng, John F. Klem, Samuel D. Hawkins, Jin K. Kim, Jian Min Zuo

Research output: Contribution to journalArticlepeer-review

Abstract

We show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice (SLS) is accompanied by significant strain fluctuations. The SLS was observed using scanning transmission electron microscopy along the [100] zone axis where the cation and anion atomic columns are separately resolved. Strain analysis based on atomic column positions reveals asymmetrical transitions in the strain profile across the SLS interfaces. The averaged strain profile is quantitatively fitted to the segregation model, which yields a distribution of Sb in agreement with the scanning tunneling microscopy result. The subtraction of the calculated strain reveals an increase in strain fluctuations with the Sb concentration, as well as isolated regions with large strain deviations extending spatially over ∼1 nm, which suggest the presence of point defects.

Original languageEnglish (US)
Article number161521
JournalJournal of Applied Physics
Volume123
Issue number16
DOIs
StatePublished - Apr 28 2018

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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