Saturation behavior of the light-induced defect density in hydrogenated amorphous silicon

H. R. Park, J. Z. Liu, P. Roca i Cabarrocas, A. Maruyama, M. Isomura, S. Wagner, J. R. Abelson, F. Finger

Research output: Contribution to journalConference articlepeer-review


The light-induced generation of defects in a-Si:H(F) was saturated by a few hours of illumination with Kr-ion-laser light soaking (λ = 647.1 nm) near room temperature. The time to reach saturation scales roughly with 1/G2, but the saturation value is essentially independent of the illumination intensity. Therefore, the saturation is not due to thermal annealing. The saturation values of the light-induced defect density in 37 a-Si:H(F) samples which had been grown in six different reactors over a range of conditions were measured. These a-Si:H(F) samples have annealed-state defect densities in the range of 1.1 × 1015 to 1.6 × 1016 cm-3, Urbach energies of 42-62 meV, and Tauc optical bandgaps of 1.61 to 1.83 eV. The saturation value rises from 5 × 1016 to 2 × 1017 cm-3 with increasing optical gap and total hydrogen content, but it is not correlated with the Urbach energy or with the annealed-state defect density.

Original languageEnglish (US)
Pages (from-to)1642-1647
Number of pages6
JournalConference Record of the IEEE Photovoltaic Specialists Conference
StatePublished - May 1990
Externally publishedYes
EventTwenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) - Kissimimee, FL, USA
Duration: May 21 1990May 25 1990

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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