Saturation behavior of the light-induced defect density in hydrogenated amorphous silicon

H. R. Park; J. Z. Liu; P. Roca i Cabarrocas; A. Maruyama; M. Isomura; S. Wagner; J. R. Abelson; F. Finger

Saturation behavior of the light-induced defect density in hydrogenated amorphous silicon

H. R. Park, J. Z. Liu, P. Roca i Cabarrocas, A. Maruyama, M. Isomura, S. Wagner, J. R. Abelson, F. Finger

Research output: Contribution to journal › Conference article › peer-review

Abstract

The light-induced generation of defects in a-Si:H(F) was saturated by a few hours of illumination with Kr-ion-laser light soaking (λ = 647.1 nm) near room temperature. The time to reach saturation scales roughly with 1/G², but the saturation value is essentially independent of the illumination intensity. Therefore, the saturation is not due to thermal annealing. The saturation values of the light-induced defect density in 37 a-Si:H(F) samples which had been grown in six different reactors over a range of conditions were measured. These a-Si:H(F) samples have annealed-state defect densities in the range of 1.1 × 10¹⁵ to 1.6 × 10¹⁶ cm^-3, Urbach energies of 42-62 meV, and Tauc optical bandgaps of 1.61 to 1.83 eV. The saturation value rises from 5 × 10¹⁶ to 2 × 10¹⁷ cm^-3 with increasing optical gap and total hydrogen content, but it is not correlated with the Urbach energy or with the annealed-state defect density.

Original language	English (US)
Pages (from-to)	1642-1647
Number of pages	6
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2
State	Published - May 1990
Externally published	Yes
Event	Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) - Kissimimee, FL, USA Duration: May 21 1990 → May 25 1990

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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title = "Saturation behavior of the light-induced defect density in hydrogenated amorphous silicon",

abstract = "The light-induced generation of defects in a-Si:H(F) was saturated by a few hours of illumination with Kr-ion-laser light soaking (λ = 647.1 nm) near room temperature. The time to reach saturation scales roughly with 1/G2, but the saturation value is essentially independent of the illumination intensity. Therefore, the saturation is not due to thermal annealing. The saturation values of the light-induced defect density in 37 a-Si:H(F) samples which had been grown in six different reactors over a range of conditions were measured. These a-Si:H(F) samples have annealed-state defect densities in the range of 1.1 × 1015 to 1.6 × 1016 cm-3, Urbach energies of 42-62 meV, and Tauc optical bandgaps of 1.61 to 1.83 eV. The saturation value rises from 5 × 1016 to 2 × 1017 cm-3 with increasing optical gap and total hydrogen content, but it is not correlated with the Urbach energy or with the annealed-state defect density.",

author = "Park, {H. R.} and Liu, {J. Z.} and {Roca i Cabarrocas}, P. and A. Maruyama and M. Isomura and S. Wagner and Abelson, {J. R.} and F. Finger",

year = "1990",

month = may,

language = "English (US)",

volume = "2",

pages = "1642--1647",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Saturation behavior of the light-induced defect density in hydrogenated amorphous silicon

AU - Park, H. R.

AU - Liu, J. Z.

AU - Roca i Cabarrocas, P.

AU - Maruyama, A.

AU - Isomura, M.

AU - Wagner, S.

AU - Abelson, J. R.

AU - Finger, F.

PY - 1990/5

Y1 - 1990/5

N2 - The light-induced generation of defects in a-Si:H(F) was saturated by a few hours of illumination with Kr-ion-laser light soaking (λ = 647.1 nm) near room temperature. The time to reach saturation scales roughly with 1/G2, but the saturation value is essentially independent of the illumination intensity. Therefore, the saturation is not due to thermal annealing. The saturation values of the light-induced defect density in 37 a-Si:H(F) samples which had been grown in six different reactors over a range of conditions were measured. These a-Si:H(F) samples have annealed-state defect densities in the range of 1.1 × 1015 to 1.6 × 1016 cm-3, Urbach energies of 42-62 meV, and Tauc optical bandgaps of 1.61 to 1.83 eV. The saturation value rises from 5 × 1016 to 2 × 1017 cm-3 with increasing optical gap and total hydrogen content, but it is not correlated with the Urbach energy or with the annealed-state defect density.

AB - The light-induced generation of defects in a-Si:H(F) was saturated by a few hours of illumination with Kr-ion-laser light soaking (λ = 647.1 nm) near room temperature. The time to reach saturation scales roughly with 1/G2, but the saturation value is essentially independent of the illumination intensity. Therefore, the saturation is not due to thermal annealing. The saturation values of the light-induced defect density in 37 a-Si:H(F) samples which had been grown in six different reactors over a range of conditions were measured. These a-Si:H(F) samples have annealed-state defect densities in the range of 1.1 × 1015 to 1.6 × 1016 cm-3, Urbach energies of 42-62 meV, and Tauc optical bandgaps of 1.61 to 1.83 eV. The saturation value rises from 5 × 1016 to 2 × 1017 cm-3 with increasing optical gap and total hydrogen content, but it is not correlated with the Urbach energy or with the annealed-state defect density.

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JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)

Y2 - 21 May 1990 through 25 May 1990

ER -

Saturation behavior of the light-induced defect density in hydrogenated amorphous silicon

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