S-parameter VLSI transmission line analysis

B. J. Cooke, J. L. Prince, A. C. Cangellaris, O. A. Palusinski

Research output: Contribution to journalConference articlepeer-review


The implementation of scattering parameter techniques for the analysis of high-speed integrated circuit and packaging interconnects is discussed. The use of frequency-domain scattering parameters allows for: frequency-dependent parameters; analysis of harmonic excitation, i.e., periodic (clocked) waveforms; non-TEM effects; and the incorporation of measured scattering parameter of data into the analysis. The solution of an arbitrarily interconnected scattering parameter network is reviewed and developed for both frequency and time domain. Scattering parameter models of typical VLSI elements are reviewed and developed. Incorporation of external scattering parameters is discussed. Implementation of the technique in a useful computational tool for analysis of VLSI packaging is described. Two typical VLSI packaging problems are solved, and the results are discussed.

Original languageEnglish (US)
Pages (from-to)847-856
Number of pages10
JournalProceedings - Electronic Components and Technology Conference
StatePublished - 1989
Externally publishedYes
Event39th Electronic Components - Houston, TX, USA
Duration: May 22 1989May 24 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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