Abstract
The implementation of scattering parameter techniques for the analysis of high-speed integrated circuit and packaging interconnects is discussed. The use of frequency-domain scattering parameters allows for: frequency-dependent parameters; analysis of harmonic excitation, i.e., periodic (clocked) waveforms; non-TEM effects; and the incorporation of measured scattering parameter of data into the analysis. The solution of an arbitrarily interconnected scattering parameter network is reviewed and developed for both frequency and time domain. Scattering parameter models of typical VLSI elements are reviewed and developed. Incorporation of external scattering parameters is discussed. Implementation of the technique in a useful computational tool for analysis of VLSI packaging is described. Two typical VLSI packaging problems are solved, and the results are discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 847-856 |
| Number of pages | 10 |
| Journal | Proceedings - Electronic Components and Technology Conference |
| State | Published - 1989 |
| Externally published | Yes |
| Event | 39th Electronic Components - Houston, TX, USA Duration: May 22 1989 → May 24 1989 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering