Roughening rates of strained-layer instabilities

Fumiya Watanabe, David G. Cahill, J. E. Greene

Research output: Contribution to journalArticlepeer-review


We study the evolution of the morphology of Si0.75Ge 0.25 strained layers using a wide range of deposition times, 60 < τ < 2400 s, at 600°C on laser textured substrates with miscuts θ < 15° off Si(001). Ripple-shaped morphologies form spontaneously on miscuts along the 〈110〉 directions. At the shortest deposition times, roughening is suppressed as predicted by a linear stability analysis that uses previously measured values for the mass transport rate on the surface. The measured time constant of the roughening is ≈ 80 s, a factor of 4 larger than predicted by theory.

Original languageEnglish (US)
Article number066101
JournalPhysical review letters
Issue number6
StatePublished - Feb 18 2005

ASJC Scopus subject areas

  • General Physics and Astronomy


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