Room Temperature Photonic Crystal Surface Emitting Laser with Synthesized Monolayer Tungsten Disulfide

Xiaochen Ge; Momchil Minkov; Tanushree Choudhury; Mikhail Chubarov; Shanhui Fan; Joan Redwing; Xiuling Li; Weidong Zhou

doi:10.1109/ISLC.2018.8516219

Room Temperature Photonic Crystal Surface Emitting Laser with Synthesized Monolayer Tungsten Disulfide

Xiaochen Ge, Momchil Minkov, Tanushree Choudhury, Mikhail Chubarov, Shanhui Fan, Joan Redwing, Xiuling Li, Weidong Zhou

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Lasing with a narrow linewidth is achieved from large area monolayer tungsten disulfide film synthesized by chemical vapor deposition after integrating onto silicon nitride heterostructure photonic crystal cavities.

Original language	English (US)
Title of host publication	26th International Semiconductor Laser Conference, ISLC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	167-168
Number of pages	2
ISBN (Electronic)	9781538664865
DOIs	https://doi.org/10.1109/ISLC.2018.8516219
State	Published - Oct 30 2018
Event	26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States Duration: Sep 16 2018 → Sep 19 2018

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
Volume	2018-September
ISSN (Print)	0899-9406

Other

Other	26th International Semiconductor Laser Conference, ISLC 2018
Country/Territory	United States
City	Santa Fe
Period	9/16/18 → 9/19/18

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/ISLC.2018.8516219

Library availability

Discover UIUC Full Text

Cite this

Ge, X., Minkov, M., Choudhury, T., Chubarov, M., Fan, S., Redwing, J., Li, X., & Zhou, W. (2018). Room Temperature Photonic Crystal Surface Emitting Laser with Synthesized Monolayer Tungsten Disulfide. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 167-168). Article 8516219 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516219

Room Temperature Photonic Crystal Surface Emitting Laser with Synthesized Monolayer Tungsten Disulfide. / Ge, Xiaochen; Minkov, Momchil; Choudhury, Tanushree et al.
26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 167-168 8516219 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ge, X, Minkov, M, Choudhury, T, Chubarov, M, Fan, S, Redwing, J, Li, X & Zhou, W 2018, Room Temperature Photonic Crystal Surface Emitting Laser with Synthesized Monolayer Tungsten Disulfide. in 26th International Semiconductor Laser Conference, ISLC 2018., 8516219, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 2018-September, Institute of Electrical and Electronics Engineers Inc., pp. 167-168, 26th International Semiconductor Laser Conference, ISLC 2018, Santa Fe, United States, 9/16/18. https://doi.org/10.1109/ISLC.2018.8516219

Ge X, Minkov M, Choudhury T, Chubarov M, Fan S, Redwing J et al. Room Temperature Photonic Crystal Surface Emitting Laser with Synthesized Monolayer Tungsten Disulfide. In 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 167-168. 8516219. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.2018.8516219

Ge, Xiaochen ; Minkov, Momchil ; Choudhury, Tanushree et al. / Room Temperature Photonic Crystal Surface Emitting Laser with Synthesized Monolayer Tungsten Disulfide. 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 167-168 (Conference Digest - IEEE International Semiconductor Laser Conference).

@inproceedings{0cad26a0e8a54e87bdff78d1dec37c56,

title = "Room Temperature Photonic Crystal Surface Emitting Laser with Synthesized Monolayer Tungsten Disulfide",

abstract = "Lasing with a narrow linewidth is achieved from large area monolayer tungsten disulfide film synthesized by chemical vapor deposition after integrating onto silicon nitride heterostructure photonic crystal cavities.",

author = "Xiaochen Ge and Momchil Minkov and Tanushree Choudhury and Mikhail Chubarov and Shanhui Fan and Joan Redwing and Xiuling Li and Weidong Zhou",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 26th International Semiconductor Laser Conference, ISLC 2018 ; Conference date: 16-09-2018 Through 19-09-2018",

year = "2018",

month = oct,

day = "30",

doi = "10.1109/ISLC.2018.8516219",

language = "English (US)",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "167--168",

booktitle = "26th International Semiconductor Laser Conference, ISLC 2018",

address = "United States",

}

TY - GEN

T1 - Room Temperature Photonic Crystal Surface Emitting Laser with Synthesized Monolayer Tungsten Disulfide

AU - Ge, Xiaochen

AU - Minkov, Momchil

AU - Choudhury, Tanushree

AU - Chubarov, Mikhail

AU - Fan, Shanhui

AU - Redwing, Joan

AU - Li, Xiuling

AU - Zhou, Weidong

PY - 2018/10/30

Y1 - 2018/10/30

N2 - Lasing with a narrow linewidth is achieved from large area monolayer tungsten disulfide film synthesized by chemical vapor deposition after integrating onto silicon nitride heterostructure photonic crystal cavities.

AB - Lasing with a narrow linewidth is achieved from large area monolayer tungsten disulfide film synthesized by chemical vapor deposition after integrating onto silicon nitride heterostructure photonic crystal cavities.

UR - http://www.scopus.com/inward/record.url?scp=85057424628&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057424628&partnerID=8YFLogxK

U2 - 10.1109/ISLC.2018.8516219

DO - 10.1109/ISLC.2018.8516219

M3 - Conference contribution

AN - SCOPUS:85057424628

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 167

EP - 168

BT - 26th International Semiconductor Laser Conference, ISLC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 26th International Semiconductor Laser Conference, ISLC 2018

Y2 - 16 September 2018 through 19 September 2018

ER -

Room Temperature Photonic Crystal Surface Emitting Laser with Synthesized Monolayer Tungsten Disulfide

Abstract

Publication series

Other

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this