Room Temperature Photonic Crystal Surface Emitting Laser with Synthesized Monolayer Tungsten Disulfide

Xiaochen Ge, Momchil Minkov, Tanushree Choudhury, Mikhail Chubarov, Shanhui Fan, Joan Redwing, Xiuling Li, Weidong Zhou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Lasing with a narrow linewidth is achieved from large area monolayer tungsten disulfide film synthesized by chemical vapor deposition after integrating onto silicon nitride heterostructure photonic crystal cavities.

Original languageEnglish (US)
Title of host publication26th International Semiconductor Laser Conference, ISLC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages167-168
Number of pages2
ISBN (Electronic)9781538664865
DOIs
StatePublished - Oct 30 2018
Event26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States
Duration: Sep 16 2018Sep 19 2018

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
Volume2018-September
ISSN (Print)0899-9406

Other

Other26th International Semiconductor Laser Conference, ISLC 2018
CountryUnited States
CitySanta Fe
Period9/16/189/19/18

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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  • Cite this

    Ge, X., Minkov, M., Choudhury, T., Chubarov, M., Fan, S., Redwing, J., Li, X., & Zhou, W. (2018). Room Temperature Photonic Crystal Surface Emitting Laser with Synthesized Monolayer Tungsten Disulfide. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 167-168). [8516219] (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516219