Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser

M. Feng, N. Holonyak, C. Y. Wang

Research output: Contribution to journalArticle

Abstract

Optical bistable devices are fundamental to digital photonics as building blocks of switches, logic gates, and memories in future computer systems. Here, we demonstrate both optical and electrical bistability and capability for switching in a single transistor operated at room temperature. The electro-optical hysteresis is explained by the interaction of electron-hole (e-h) generation and recombination dynamics with the cavity photon modulation in different switching paths. The switch-UP and switch-DOWN threshold voltages are determined by the rate difference of photon generation at the base quantum-well and the photon absorption via intra-cavity photon-assisted tunneling controlled by the collector voltage. Thus, the transistor laser electro-optical bistable switching is programmable with base current and collector voltage, and the basis for high speed optical logic processors.

Original languageEnglish (US)
Article number103102
JournalJournal of Applied Physics
Volume122
Issue number10
DOIs
StatePublished - Sep 14 2017

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser'. Together they form a unique fingerprint.

  • Cite this