Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes

C. Bayram; Z. Vashaei; M. Razeghi

doi:10.1063/1.3484280

Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes

C. Bayram, Z. Vashaei, M. Razeghi

Research output: Contribution to journal › Article › peer-review

Abstract

III-nitride resonant tunneling diodes (RTDs), consisting A_l0.2 Ga_0.8 N/GaN double-barrier (DB) active layers, were grown on c-plane lateral epitaxial overgrowth (LEO) GaN/sapphire and c-plane freestanding (FS) GaN. RTDs on both templates, fabricated into mesa diameters ranging from 5 to 35 μm, showed negative differential resistance (NDR) at room temperature. NDR characteristics (voltage and current density at NDR onset and current-peak-to-valley ratio) were analyzed and reported as a function of device size and substrate choice. Our results show that LEO RTDs perform as well as FS ones and DB active layer design and quality have been the bottlenecks in III-nitride RTDs.

Original language	English (US)
Article number	092104
Journal	Applied Physics Letters
Volume	97
Issue number	9
DOIs	https://doi.org/10.1063/1.3484280
State	Published - Aug 30 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3484280

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abstract = "III-nitride resonant tunneling diodes (RTDs), consisting Al0.2 Ga0.8 N/GaN double-barrier (DB) active layers, were grown on c-plane lateral epitaxial overgrowth (LEO) GaN/sapphire and c-plane freestanding (FS) GaN. RTDs on both templates, fabricated into mesa diameters ranging from 5 to 35 μm, showed negative differential resistance (NDR) at room temperature. NDR characteristics (voltage and current density at NDR onset and current-peak-to-valley ratio) were analyzed and reported as a function of device size and substrate choice. Our results show that LEO RTDs perform as well as FS ones and DB active layer design and quality have been the bottlenecks in III-nitride RTDs.",

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AU - Bayram, C.

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AB - III-nitride resonant tunneling diodes (RTDs), consisting Al0.2 Ga0.8 N/GaN double-barrier (DB) active layers, were grown on c-plane lateral epitaxial overgrowth (LEO) GaN/sapphire and c-plane freestanding (FS) GaN. RTDs on both templates, fabricated into mesa diameters ranging from 5 to 35 μm, showed negative differential resistance (NDR) at room temperature. NDR characteristics (voltage and current density at NDR onset and current-peak-to-valley ratio) were analyzed and reported as a function of device size and substrate choice. Our results show that LEO RTDs perform as well as FS ones and DB active layer design and quality have been the bottlenecks in III-nitride RTDs.

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Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes

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