TY - JOUR
T1 - Room-temperature mid-infrared quantum well lasers on multi-functional metamorphic buffers
AU - Jung, Daehwan
AU - Yu, Lan
AU - Dev, Sukrith
AU - Wasserman, Daniel M
AU - Lee, Minjoo Larry
N1 - Funding Information:
D.J. and M.L.L. acknowledge the support from Toyota Motor Corporation. L.Y. and D.W. acknowledge the support from the National Science Foundation CAREER program (Award No. 1157933). We also acknowledge Hojoong Jung at Yale for optical mode simulations.
Publisher Copyright:
© 2016 Author(s).
PY - 2016/11/21
Y1 - 2016/11/21
N2 - The modern commercial optoelectronic infrastructure rests on a foundation of only a few, select semiconductor materials, capable of serving as viable substrates for devices. Any new active device, to have any hope of moving past the laboratory setting, must demonstrate compatibility with these substrate materials. Across much of the electromagnetic spectrum, this simple fact has guided the development of lasers, photodetectors, and other optoelectronic devices. In this work, we propose and demonstrate the concept of a multi-functional metamorphic buffer (MFMB) layer that not only allows for growth of highly lattice-mismatched active regions on InP substrates but also serves as a bottom cladding layer for optical confinement in a laser waveguide. Using the MFMB concept in conjunction with a strain-balanced multiple quantum well active region, we demonstrate laser diodes operating at room temperature in the technologically vital, and currently underserved, 2.5-3.0 μm wavelength range.
AB - The modern commercial optoelectronic infrastructure rests on a foundation of only a few, select semiconductor materials, capable of serving as viable substrates for devices. Any new active device, to have any hope of moving past the laboratory setting, must demonstrate compatibility with these substrate materials. Across much of the electromagnetic spectrum, this simple fact has guided the development of lasers, photodetectors, and other optoelectronic devices. In this work, we propose and demonstrate the concept of a multi-functional metamorphic buffer (MFMB) layer that not only allows for growth of highly lattice-mismatched active regions on InP substrates but also serves as a bottom cladding layer for optical confinement in a laser waveguide. Using the MFMB concept in conjunction with a strain-balanced multiple quantum well active region, we demonstrate laser diodes operating at room temperature in the technologically vital, and currently underserved, 2.5-3.0 μm wavelength range.
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U2 - 10.1063/1.4968560
DO - 10.1063/1.4968560
M3 - Article
AN - SCOPUS:84998706891
SN - 0003-6951
VL - 109
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 21
M1 - 211101
ER -