Room temperature electroluminescence from light-emitting diodes based on In 0.5Ga 0.5As/GaP self-assembled quantum dots

Yuncheng Song, Minjoo Larry Lee

Research output: Contribution to journalArticlepeer-review

Abstract

Room-temperature electroluminescence from In 0.5Ga 0.5As/GaP(001) self-assembled quantum dot light emitting diodes is demonstrated. Output light versus input current measurements indicate that stacking multiple periods of self-assembled quantum dots can substantially increase the electroluminescence intensity. Aside from potential applications in transparent-substrate light emitting diodes, In xGa 1-xAs/GaP self-assembled quantum dots could be a possible candidate for monolithic integration of optoelectronics with Si due to recent advances in the growth of high-quality GaP on Si.

Original languageEnglish (US)
Article number251904
JournalApplied Physics Letters
Volume100
Issue number25
DOIs
StatePublished - Jun 18 2012
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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