Room-temperature electroluminescence from In 0.5Ga 0.5As/GaP(001) self-assembled quantum dot light emitting diodes is demonstrated. Output light versus input current measurements indicate that stacking multiple periods of self-assembled quantum dots can substantially increase the electroluminescence intensity. Aside from potential applications in transparent-substrate light emitting diodes, In xGa 1-xAs/GaP self-assembled quantum dots could be a possible candidate for monolithic integration of optoelectronics with Si due to recent advances in the growth of high-quality GaP on Si.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)