Continuous wave laser operation at 25 °C, with simultaneous electrical gain, of an InGaP-GaAs heterojunction bipolar transistor laser, with AlGaAs optical confining layers and an InGaAs recombination quantum well incorporated into the p -type base region, is demonstrated. At laser threshold (IB =40 mA, VCB =0, 25 °C), the transistor current gain Β=Δ IC Δ IB in common-emitter operation changes abruptly (2.3→1.2,Β>1), with laser modes developing at wavelength λ∼1006 nm. Direct three-port modulation of the transistor laser at 3 GHz is demonstrated for a device with a 2.2 μm emitter width and a 850 μm length between cleaved Fabry-Perot facets (which is the performance of an exploratory device and not near the limits).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)