TY - JOUR
T1 - Room temperature continuous wave operation of a heterojunction bipolar transistor laser
AU - Feng, M.
AU - Holonyak, N.
AU - Walter, G.
AU - Chan, R.
N1 - Funding Information:
The authors are grateful for the support of DARPA Contract No. HR0011-04-1-0034 (Hyper-Uniform Nano-photonics Technologies, HUNT Center). We wish also to thank instrument makers S. McDonald and R. Feller for help in constructing some of the experimental apparatus, and Ya-Shu Feng for manuscript preparation. M.F. is grateful for the support of the Nick Holonyak, Jr. Chair, and N.H., Jr. for the John Bardeen Chair (Sony).
PY - 2005/9/26
Y1 - 2005/9/26
N2 - Continuous wave laser operation at 25 °C, with simultaneous electrical gain, of an InGaP-GaAs heterojunction bipolar transistor laser, with AlGaAs optical confining layers and an InGaAs recombination quantum well incorporated into the p -type base region, is demonstrated. At laser threshold (IB =40 mA, VCB =0, 25 °C), the transistor current gain Β=Δ IC Δ IB in common-emitter operation changes abruptly (2.3→1.2,Β>1), with laser modes developing at wavelength λ∼1006 nm. Direct three-port modulation of the transistor laser at 3 GHz is demonstrated for a device with a 2.2 μm emitter width and a 850 μm length between cleaved Fabry-Perot facets (which is the performance of an exploratory device and not near the limits).
AB - Continuous wave laser operation at 25 °C, with simultaneous electrical gain, of an InGaP-GaAs heterojunction bipolar transistor laser, with AlGaAs optical confining layers and an InGaAs recombination quantum well incorporated into the p -type base region, is demonstrated. At laser threshold (IB =40 mA, VCB =0, 25 °C), the transistor current gain Β=Δ IC Δ IB in common-emitter operation changes abruptly (2.3→1.2,Β>1), with laser modes developing at wavelength λ∼1006 nm. Direct three-port modulation of the transistor laser at 3 GHz is demonstrated for a device with a 2.2 μm emitter width and a 850 μm length between cleaved Fabry-Perot facets (which is the performance of an exploratory device and not near the limits).
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U2 - 10.1063/1.2058213
DO - 10.1063/1.2058213
M3 - Article
AN - SCOPUS:28344450208
SN - 0003-6951
VL - 87
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 13
M1 - 131103
ER -