Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm

K. D. Choquette, J. F. Klem, A. J. Fischer, O. Blum, A. A. Allerman, I. J. Fritz, S. R. Kurtz, W. G. Breiland, R. Sieg, K. M. Geib, J. W. Scott, R. L. Naone

Research output: Contribution to journalArticle

Abstract

Selectively oxidized vertical-cavity lasers emitting at 1294 nm using InGaAsN/GaAs quantum wells which exhibit continuous wave operation at and above room temperature are reported for the first time. The lasers employ two n-type Al0.94Ga0.06As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave singlemode lasing is observed up to 55 °C. These lasers exhibit the longest wavelength reported to date for vertical-cavity surface lasers grown on GaAs substrates.

Original languageEnglish (US)
Pages (from-to)1388-1390
Number of pages3
JournalElectronics Letters
Volume36
Issue number16
DOIs
StatePublished - Aug 3 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Choquette, K. D., Klem, J. F., Fischer, A. J., Blum, O., Allerman, A. A., Fritz, I. J., Kurtz, S. R., Breiland, W. G., Sieg, R., Geib, K. M., Scott, J. W., & Naone, R. L. (2000). Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm. Electronics Letters, 36(16), 1388-1390. https://doi.org/10.1049/el:20000928