Selectively oxidized vertical-cavity lasers emitting at 1294 nm using InGaAsN/GaAs quantum wells which exhibit continuous wave operation at and above room temperature are reported for the first time. The lasers employ two n-type Al0.94Ga0.06As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave singlemode lasing is observed up to 55 °C. These lasers exhibit the longest wavelength reported to date for vertical-cavity surface lasers grown on GaAs substrates.
ASJC Scopus subject areas
- Electrical and Electronic Engineering