Abstract
Selectively oxidized vertical-cavity lasers emitting at 1294 nm using InGaAsN/GaAs quantum wells which exhibit continuous wave operation at and above room temperature are reported for the first time. The lasers employ two n-type Al0.94Ga0.06As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave singlemode lasing is observed up to 55 °C. These lasers exhibit the longest wavelength reported to date for vertical-cavity surface lasers grown on GaAs substrates.
Original language | English (US) |
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Pages (from-to) | 1388-1390 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 36 |
Issue number | 16 |
DOIs | |
State | Published - Aug 3 2000 |
Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering