Abstract
The first low-threshold 1.55 μm lasers grown on GaAs are reported. Lasing at 1.55 μm was observed from a 20×2400 μm as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm2, external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm2 with >600 mW peak output power.
Original language | English (US) |
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Pages (from-to) | 39-40 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 42 |
Issue number | 3 |
DOIs | |
State | Published - Feb 2 2006 |
Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering