Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs

S. R. Bank; H. P. Bae; H. B. Yuen; M. A. Wistey; L. L. Goddard; J. S. Harris

doi:10.1049/el:20064022

Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs

S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris

Research output: Contribution to journal › Article

Abstract

The first low-threshold 1.55 μm lasers grown on GaAs are reported. Lasing at 1.55 μm was observed from a 20×2400 μm as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm², external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm² with >600 mW peak output power.

Original language	English (US)
Pages (from-to)	39-40
Number of pages	2
Journal	Electronics Letters
Volume	42
Issue number	3
DOIs	https://doi.org/10.1049/el:20064022
State	Published - Feb 2 2006
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Bank, S. R., Bae, H. P., Yuen, H. B., Wistey, M. A., Goddard, L. L., & Harris, J. S. (2006). Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs. Electronics Letters, 42(3), 39-40. https://doi.org/10.1049/el:20064022

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AU - Yuen, H. B.

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AU - Goddard, L. L.

AU - Harris, J. S.

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