Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs

S. R. Bank; H. P. Bae; H. B. Yuen; M. A. Wistey; L. L. Goddard; J. S. Harris

doi:10.1049/el:20064022

Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs

S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris

Research output: Contribution to journal › Article › peer-review

Abstract

The first low-threshold 1.55 μm lasers grown on GaAs are reported. Lasing at 1.55 μm was observed from a 20×2400 μm as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm², external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm² with >600 mW peak output power.

Original language	English (US)
Pages (from-to)	39-40
Number of pages	2
Journal	Electronics Letters
Volume	42
Issue number	3
DOIs	https://doi.org/10.1049/el:20064022
State	Published - Feb 2 2006
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs",

abstract = "The first low-threshold 1.55 μm lasers grown on GaAs are reported. Lasing at 1.55 μm was observed from a 20×2400 μm as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm2, external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm2 with >600 mW peak output power.",

author = "Bank, {S. R.} and Bae, {H. P.} and Yuen, {H. B.} and Wistey, {M. A.} and Goddard, {L. L.} and Harris, {J. S.}",

year = "2006",

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AU - Bank, S. R.

AU - Bae, H. P.

AU - Yuen, H. B.

AU - Wistey, M. A.

AU - Goddard, L. L.

AU - Harris, J. S.

PY - 2006/2/2

Y1 - 2006/2/2

N2 - The first low-threshold 1.55 μm lasers grown on GaAs are reported. Lasing at 1.55 μm was observed from a 20×2400 μm as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm2, external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm2 with >600 mW peak output power.

AB - The first low-threshold 1.55 μm lasers grown on GaAs are reported. Lasing at 1.55 μm was observed from a 20×2400 μm as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm2, external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm2 with >600 mW peak output power.

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