Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs

S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris

Research output: Contribution to journalArticle

Abstract

The first low-threshold 1.55 μm lasers grown on GaAs are reported. Lasing at 1.55 μm was observed from a 20×2400 μm as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm2, external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm2 with >600 mW peak output power.

Original languageEnglish (US)
Pages (from-to)39-40
Number of pages2
JournalElectronics Letters
Volume42
Issue number3
DOIs
StatePublished - Feb 2 2006
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Bank, S. R., Bae, H. P., Yuen, H. B., Wistey, M. A., Goddard, L. L., & Harris, J. S. (2006). Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs. Electronics Letters, 42(3), 39-40. https://doi.org/10.1049/el:20064022