Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors

J. J. Huang; D. Caruth; M. Feng; D. J.H. Lambert; B. S. Shelton; M. M. Wong; U. Chowdhury; T. G. Zhu; H. K. Kwon; R. D. Dupuis

doi:10.1049/el:20010263

Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors

J. J. Huang, D. Caruth, M. Feng, D. J.H. Lambert, B. S. Shelton, M. M. Wong, U. Chowdhury, T. G. Zhu, H. K. Kwon, R. D. Dupuis

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Increased collector current and common emitter (CE) current gain at lower temperature in AlGaN/GaN heterojunction bipolar transistors is reported. For the same base current I_B = 15μA and biased voltage V_CE = 50V, the collector current increases from I_C = 169μA (β = 11) at 295K to I_C = 411μA (β = 27) at 190K. This increase in the collector current and CE gain at lower temperature can be attributed to the reduced base recombination current, which is due to the carrier traps associated with dislocation centres in the base-emitter junction.

Original language	English (US)
Pages (from-to)	393-395
Number of pages	3
Journal	Electronics Letters
Volume	37
Issue number	6
DOIs	https://doi.org/10.1049/el:20010263
State	Published - Mar 15 2001

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Electrical and Electronic Engineering

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10.1049/el:20010263

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@article{5c6cc6607e704ff8b647740236e232e0,

title = "Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors",

abstract = "Increased collector current and common emitter (CE) current gain at lower temperature in AlGaN/GaN heterojunction bipolar transistors is reported. For the same base current IB = 15μA and biased voltage VCE = 50V, the collector current increases from IC = 169μA (β = 11) at 295K to IC = 411μA (β = 27) at 190K. This increase in the collector current and CE gain at lower temperature can be attributed to the reduced base recombination current, which is due to the carrier traps associated with dislocation centres in the base-emitter junction.",

author = "Huang, {J. J.} and D. Caruth and M. Feng and Lambert, {D. J.H.} and Shelton, {B. S.} and Wong, {M. M.} and U. Chowdhury and Zhu, {T. G.} and Kwon, {H. K.} and Dupuis, {R. D.}",

year = "2001",

month = mar,

day = "15",

doi = "10.1049/el:20010263",

language = "English (US)",

volume = "37",

pages = "393--395",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons, Ltd.",

number = "6",

}

TY - JOUR

T1 - Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors

AU - Huang, J. J.

AU - Caruth, D.

AU - Feng, M.

AU - Lambert, D. J.H.

AU - Shelton, B. S.

AU - Wong, M. M.

AU - Chowdhury, U.

AU - Zhu, T. G.

AU - Kwon, H. K.

AU - Dupuis, R. D.

PY - 2001/3/15

Y1 - 2001/3/15

N2 - Increased collector current and common emitter (CE) current gain at lower temperature in AlGaN/GaN heterojunction bipolar transistors is reported. For the same base current IB = 15μA and biased voltage VCE = 50V, the collector current increases from IC = 169μA (β = 11) at 295K to IC = 411μA (β = 27) at 190K. This increase in the collector current and CE gain at lower temperature can be attributed to the reduced base recombination current, which is due to the carrier traps associated with dislocation centres in the base-emitter junction.

AB - Increased collector current and common emitter (CE) current gain at lower temperature in AlGaN/GaN heterojunction bipolar transistors is reported. For the same base current IB = 15μA and biased voltage VCE = 50V, the collector current increases from IC = 169μA (β = 11) at 295K to IC = 411μA (β = 27) at 190K. This increase in the collector current and CE gain at lower temperature can be attributed to the reduced base recombination current, which is due to the carrier traps associated with dislocation centres in the base-emitter junction.

UR - http://www.scopus.com/inward/record.url?scp=0035868194&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035868194&partnerID=8YFLogxK

U2 - 10.1049/el:20010263

DO - 10.1049/el:20010263

M3 - Article

AN - SCOPUS:0035868194

SN - 0013-5194

VL - 37

SP - 393

EP - 395

JO - Electronics Letters

JF - Electronics Letters

IS - 6

ER -

Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors

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