TY - JOUR
T1 - Role of pressure in the growth of hexagonal boron nitride thin films from ammonia-borane
AU - Koepke, Justin C.
AU - Wood, Joshua D.
AU - Chen, Yaofeng
AU - Schmucker, Scott W.
AU - Liu, Ximeng
AU - Chang, Noel N.
AU - Nienhaus, Lea
AU - Do, Jae Won
AU - Carrion, Enrique A.
AU - Hewaparakrama, Jayan
AU - Rangarajan, Aniruddh
AU - Datye, Isha
AU - Mehta, Rushabh
AU - Haasch, Richard T.
AU - Gruebele, Martin
AU - Girolami, Gregory S.
AU - Pop, Eric
AU - Lyding, Joseph W.
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/5/22
Y1 - 2016/5/22
N2 - We analyze the optical, chemical, and electrical properties of chemical vapor deposition (CVD) grown hexagonal boron nitride (h-BN) using the precursor ammonia-borane (H3N- BH3) as a function of Ar/H2 background pressure (PTOT). Films grown at PTOT ≤ 2.0 Torr are uniform in thickness, highly crystalline, and consist solely of h-BN. At larger PTOT, with constant precursor flow, the growth rate increases, but the resulting h-BN is more amorphous, disordered, and sp3-bonded. We attribute these changes in h-BN grown at high pressure to incomplete thermolysis of the H3N-BH3 precursor from a passivated Cu catalyst. A similar increase in h-BN growth rate and amorphization is observed even at low PTOT if the H3N-BH3 partial pressure is initially greater than the background pressure PTOT at the beginning of growth. h-BN growth using the H3N-BH3 precursor reproducibly can give large-Area, crystalline h-BN thin films, provided that the total pressure is under 2.0 Torr and the precursor flux is wellcontrolled.
AB - We analyze the optical, chemical, and electrical properties of chemical vapor deposition (CVD) grown hexagonal boron nitride (h-BN) using the precursor ammonia-borane (H3N- BH3) as a function of Ar/H2 background pressure (PTOT). Films grown at PTOT ≤ 2.0 Torr are uniform in thickness, highly crystalline, and consist solely of h-BN. At larger PTOT, with constant precursor flow, the growth rate increases, but the resulting h-BN is more amorphous, disordered, and sp3-bonded. We attribute these changes in h-BN grown at high pressure to incomplete thermolysis of the H3N-BH3 precursor from a passivated Cu catalyst. A similar increase in h-BN growth rate and amorphization is observed even at low PTOT if the H3N-BH3 partial pressure is initially greater than the background pressure PTOT at the beginning of growth. h-BN growth using the H3N-BH3 precursor reproducibly can give large-Area, crystalline h-BN thin films, provided that the total pressure is under 2.0 Torr and the precursor flux is wellcontrolled.
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U2 - 10.1021/acs.chemmater.6b00396
DO - 10.1021/acs.chemmater.6b00396
M3 - Article
AN - SCOPUS:84994261597
SN - 0897-4756
VL - 28
SP - 4169
EP - 4179
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 12
ER -