Role of pressure in the growth of hexagonal boron nitride thin films from ammonia-borane

Justin C. Koepke, Joshua D. Wood, Yaofeng Chen, Scott W. Schmucker, Ximeng Liu, Noel N. Chang, Lea Nienhaus, Jae Won Do, Enrique A. Carrion, Jayan Hewaparakrama, Aniruddh Rangarajan, Isha Datye, Rushabh Mehta, Richard T. Haasch, Martin Gruebele, Gregory S. Girolami, Eric Pop, Joseph W. Lyding

Research output: Contribution to journalArticle

Abstract

We analyze the optical, chemical, and electrical properties of chemical vapor deposition (CVD) grown hexagonal boron nitride (h-BN) using the precursor ammonia-borane (H 3 N- BH 3 ) as a function of Ar/H2 background pressure (PTOT). Films grown at PTOT ≤ 2.0 Torr are uniform in thickness, highly crystalline, and consist solely of h-BN. At larger PTOT, with constant precursor flow, the growth rate increases, but the resulting h-BN is more amorphous, disordered, and sp3-bonded. We attribute these changes in h-BN grown at high pressure to incomplete thermolysis of the H 3 N-BH 3 precursor from a passivated Cu catalyst. A similar increase in h-BN growth rate and amorphization is observed even at low PTOT if the H 3 N-BH 3 partial pressure is initially greater than the background pressure PTOT at the beginning of growth. h-BN growth using the H 3 N-BH 3 precursor reproducibly can give large-Area, crystalline h-BN thin films, provided that the total pressure is under 2.0 Torr and the precursor flux is wellcontrolled.

Original languageEnglish (US)
Pages (from-to)4169-4179
Number of pages11
JournalChemistry of Materials
Volume28
Issue number12
DOIs
StatePublished - May 22 2016

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Boranes
Boron nitride
Ammonia
Thin films
Crystalline materials
Thermolysis
Amorphization
boron nitride
Partial pressure
Chemical properties
Chemical vapor deposition
Electric properties
Optical properties
Fluxes
Catalysts
BH 3

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Role of pressure in the growth of hexagonal boron nitride thin films from ammonia-borane. / Koepke, Justin C.; Wood, Joshua D.; Chen, Yaofeng; Schmucker, Scott W.; Liu, Ximeng; Chang, Noel N.; Nienhaus, Lea; Do, Jae Won; Carrion, Enrique A.; Hewaparakrama, Jayan; Rangarajan, Aniruddh; Datye, Isha; Mehta, Rushabh; Haasch, Richard T.; Gruebele, Martin; Girolami, Gregory S.; Pop, Eric; Lyding, Joseph W.

In: Chemistry of Materials, Vol. 28, No. 12, 22.05.2016, p. 4169-4179.

Research output: Contribution to journalArticle

Koepke, JC, Wood, JD, Chen, Y, Schmucker, SW, Liu, X, Chang, NN, Nienhaus, L, Do, JW, Carrion, EA, Hewaparakrama, J, Rangarajan, A, Datye, I, Mehta, R, Haasch, RT, Gruebele, M, Girolami, GS, Pop, E & Lyding, JW 2016, 'Role of pressure in the growth of hexagonal boron nitride thin films from ammonia-borane', Chemistry of Materials, vol. 28, no. 12, pp. 4169-4179. https://doi.org/10.1021/acs.chemmater.6b00396
Koepke, Justin C. ; Wood, Joshua D. ; Chen, Yaofeng ; Schmucker, Scott W. ; Liu, Ximeng ; Chang, Noel N. ; Nienhaus, Lea ; Do, Jae Won ; Carrion, Enrique A. ; Hewaparakrama, Jayan ; Rangarajan, Aniruddh ; Datye, Isha ; Mehta, Rushabh ; Haasch, Richard T. ; Gruebele, Martin ; Girolami, Gregory S. ; Pop, Eric ; Lyding, Joseph W. / Role of pressure in the growth of hexagonal boron nitride thin films from ammonia-borane. In: Chemistry of Materials. 2016 ; Vol. 28, No. 12. pp. 4169-4179.
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AU - Liu, Ximeng

AU - Chang, Noel N.

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AU - Do, Jae Won

AU - Carrion, Enrique A.

AU - Hewaparakrama, Jayan

AU - Rangarajan, Aniruddh

AU - Datye, Isha

AU - Mehta, Rushabh

AU - Haasch, Richard T.

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AU - Girolami, Gregory S.

AU - Pop, Eric

AU - Lyding, Joseph W.

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N2 - We analyze the optical, chemical, and electrical properties of chemical vapor deposition (CVD) grown hexagonal boron nitride (h-BN) using the precursor ammonia-borane (H 3 N- BH 3 ) as a function of Ar/H2 background pressure (PTOT). Films grown at PTOT ≤ 2.0 Torr are uniform in thickness, highly crystalline, and consist solely of h-BN. At larger PTOT, with constant precursor flow, the growth rate increases, but the resulting h-BN is more amorphous, disordered, and sp3-bonded. We attribute these changes in h-BN grown at high pressure to incomplete thermolysis of the H 3 N-BH 3 precursor from a passivated Cu catalyst. A similar increase in h-BN growth rate and amorphization is observed even at low PTOT if the H 3 N-BH 3 partial pressure is initially greater than the background pressure PTOT at the beginning of growth. h-BN growth using the H 3 N-BH 3 precursor reproducibly can give large-Area, crystalline h-BN thin films, provided that the total pressure is under 2.0 Torr and the precursor flux is wellcontrolled.

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