TY - JOUR
T1 - Role of magnetic ions in the thermal Hall effect of the paramagnetic insulator TmVO4
AU - Vallipuram, Ashvini
AU - Chen, Lu
AU - Campillo, Emma
AU - Mezidi, Manel
AU - Grissonnanche, Gaël
AU - Boulanger, Marie Eve
AU - Lefrançois, Étienne
AU - Zic, Mark P.
AU - Li, Yuntian
AU - Fisher, Ian R.
AU - Baglo, Jordan
AU - Taillefer, Louis
N1 - We thank S. Fortier for his assistance with the experiments and A. Ataei, P. Fournier, and I. Garate for stimulating discussions. L.T. acknowledges support from the Canadian Institute for Advanced Research (CIFAR) as a CIFAR Fellow and funding from the Institut Quantique, the Natural Sciences and Engineering Research Council of Canada (NSERC; PIN:123817), the Fonds de Recherche du Québec-Nature et Technologies (FRQNT), the Canada Foundation for Innovation (CFI), and a Canada Research Chair. This research was undertaken thanks in part to funding from the Canada First Research Excellence Fund. G.G. acknowledges support from the ANR grants STeP2 No. ANR-22-EXES-0013 and QuantExt No. ANR-23-CE30-0001-01. Crystal growth and characterization performed at Stanford University was supported by the Air Force Office of Scientific Research under Award No. FA9550-20-1-0252. M.P.Z. was also partially supported by a National Science Foundation Graduate Research Fellowship under Grant No. DGE-1656518.
PY - 2024/7/15
Y1 - 2024/7/15
N2 - In a growing number of materials, phonons have been found to generate a thermal Hall effect, but the underlying mechanism remains unclear. Inspired by previous studies that revealed the importance of Tb3+ ions in generating the thermal Hall effect in a family of pyrochlores, we investigated the role of Tm3+ ions in TmVO4, a paramagnetic insulator with a different crystal structure. We observe a negative thermal Hall conductivity in TmVO4 with a magnitude such that the Hall angle, |κxy/κxx|, is approximately 1×10-3 at H = 15 T and T = 20 K, typical for a phonon-generated thermal Hall effect. In contrast to the negligible κxy found in the nonmagnetic pyrochlore analog (where the Tb3+ ions are replaced with Y3+), we observe a negative κxy in YVO4 with a Hall angle of magnitude comparable to that of TmVO4. This shows that the Tm3+ ions are not essential for the thermal Hall effect in this family of materials. Interestingly, at an intermediate Y concentration of x=0.3 in Tm1-xYxVO4, κxy was found to have a positive sign, pointing to the importance of impurities in the thermal Hall effect of phonons.
AB - In a growing number of materials, phonons have been found to generate a thermal Hall effect, but the underlying mechanism remains unclear. Inspired by previous studies that revealed the importance of Tb3+ ions in generating the thermal Hall effect in a family of pyrochlores, we investigated the role of Tm3+ ions in TmVO4, a paramagnetic insulator with a different crystal structure. We observe a negative thermal Hall conductivity in TmVO4 with a magnitude such that the Hall angle, |κxy/κxx|, is approximately 1×10-3 at H = 15 T and T = 20 K, typical for a phonon-generated thermal Hall effect. In contrast to the negligible κxy found in the nonmagnetic pyrochlore analog (where the Tb3+ ions are replaced with Y3+), we observe a negative κxy in YVO4 with a Hall angle of magnitude comparable to that of TmVO4. This shows that the Tm3+ ions are not essential for the thermal Hall effect in this family of materials. Interestingly, at an intermediate Y concentration of x=0.3 in Tm1-xYxVO4, κxy was found to have a positive sign, pointing to the importance of impurities in the thermal Hall effect of phonons.
UR - https://www.scopus.com/pages/publications/85199526738
UR - https://www.scopus.com/pages/publications/85199526738#tab=citedBy
U2 - 10.1103/PhysRevB.110.045144
DO - 10.1103/PhysRevB.110.045144
M3 - Article
AN - SCOPUS:85199526738
SN - 2469-9950
VL - 110
JO - Physical Review B
JF - Physical Review B
IS - 4
M1 - 045144
ER -