Robust Fabry-Perot interference in dual-gated Bi₂Se₃ devices

Keyphrases

• Bismuth Telluride 100%
• Fabry-Perot Interference 100%
• Top Gate 33%
• Topological Insulator 33%
• Surface States 33%
• 3D Topological Insulators 33%
• Oscillation 33%
• Mesoscopic 33%
• Back Gate 33%
• Vortex 33%
• Sample Thickness 33%
• Hybrid System 33%
• Majorana Fermions 33%
• Electrostatic Coupling 33%
• Carrier Density 33%
• Strong Dependence 33%
• Bulk Carrier 33%
• Conductance Oscillation 33%
• Zero Modes 33%
• Phase-coherent Transport 33%
• Superconducting Disc 33%

Physics

• Topological Insulator 100%
• Fermion 50%
• Electrostatics 50%