Robust Fabry-Perot interference in dual-gated Bi2Se3 devices

A. D.K. Finck, C. Kurter, E. D. Huemiller, Y. S. Hor, D. J. Van Harlingen

Research output: Contribution to journalArticle

Abstract

We study Fabry-Perot interference in hybrid devices, each consisting of a mesoscopic superconducting disk deposited on the surface of a three-dimensional topological insulator. Such structures are hypothesized to contain protected zero modes known as Majorana fermions bound to vortices. The interference manifests as periodic conductance oscillations of magnitude ∼ 0.1 e 2 / h. These oscillations show no strong dependence on bulk carrier density or sample thickness, suggesting that they result from phase coherent transport in surface states. However, the Fabry-Perot interference can be tuned by both top and back gates, implying strong electrostatic coupling between the top and bottom surfaces of topological insulator.

Original languageEnglish (US)
Article number203101
JournalApplied Physics Letters
Volume108
Issue number20
DOIs
StatePublished - May 16 2016

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interference
insulators
oscillations
fermions
vortices
electrostatics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Robust Fabry-Perot interference in dual-gated Bi2Se3 devices. / Finck, A. D.K.; Kurter, C.; Huemiller, E. D.; Hor, Y. S.; Van Harlingen, D. J.

In: Applied Physics Letters, Vol. 108, No. 20, 203101, 16.05.2016.

Research output: Contribution to journalArticle

Finck, A. D.K. ; Kurter, C. ; Huemiller, E. D. ; Hor, Y. S. ; Van Harlingen, D. J. / Robust Fabry-Perot interference in dual-gated Bi2Se3 devices. In: Applied Physics Letters. 2016 ; Vol. 108, No. 20.
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