Abstract
In recently synthesized two-dimensional superlattices of graphene and boron nitride, the atomic structure of the interface is complicated by a 2% lattice mismatch between the two materials. Using atomistic and continuum analysis, we show that the mismatch results in a competition between two strain-relieving mechanisms: misfit dislocations and rippling. For flat superlattices, beyond a critical pitch the interface is decorated by strain-relieving misfit dislocations. For superlattices that can deform out-of-plane, optimal ripple wavelengths emerge.
Original language | English (US) |
---|---|
Pages (from-to) | 1468-1475 |
Number of pages | 8 |
Journal | Nano letters |
Volume | 15 |
Issue number | 3 |
DOIs | |
State | Published - Mar 11 2015 |
Keywords
- Graphene
- heteroepitaxy
- hexagonal boron nitride
- interface structure
- lattice relaxation
- misfit dislocations
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Mechanical Engineering