The monolithic integration of enhancement- and depletion-mode (E/D) 0.5m gate-length HEMTs on lattice-matched InP has been demonstrated by the fabrication of a ring oscillator. The circuit consists of 28 devices. Control over threshold voltage for both the E-HEMTs and D-HEMTs in this process is excellent. E-HEMT threshold voltage is 195 mV with a 9 mV standard deviation and D-HEMT threshold voltage is -365 mV with a 19 mV standard deviation. The inverters that make up the oscillator exhibit a 450 mV static output voltage swing and noise margins of 145 mV at a supply voltage of 0.6 V. The ring oscillator showed minimum propagation delay of 20.66 ps, a minimum power consumption/stage of 120 μW, and a minimum power-delay product of 2.65 fJ/stage.
|Original language||English (US)|
|Number of pages||4|
|Journal||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|State||Published - 1997|
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)