Abstract
The monolithic integration of enhancement- and depletion-mode (E/D) 0.5m gate-length HEMTs on lattice-matched InP has been demonstrated by the fabrication of a ring oscillator. The circuit consists of 28 devices. Control over threshold voltage for both the E-HEMTs and D-HEMTs in this process is excellent. E-HEMT threshold voltage is 195 mV with a 9 mV standard deviation and D-HEMT threshold voltage is -365 mV with a 19 mV standard deviation. The inverters that make up the oscillator exhibit a 450 mV static output voltage swing and noise margins of 145 mV at a supply voltage of 0.6 V. The ring oscillator showed minimum propagation delay of 20.66 ps, a minimum power consumption/stage of 120 μW, and a minimum power-delay product of 2.65 fJ/stage.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 157-160 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| State | Published - 1997 |
| Event | Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA Duration: May 11 1997 → May 15 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering