The radio frequency (RF) performance of a III'V transistor comprised of nanowire (NW) high-electron mobility channels, grown by planar vapor'liquid'solid epitaxy in parallel arrays, is examined. An equivalent small-signal circuit model was used to study the contributing extrinsic and intrinsic passive elements on the NW performance as a function of bias and gate length (LG). Adequate intrinsic gain (gm/gds) ~25 with low intrinsic (Ri) and terminal resistances (RG, RS, RD) lead to an fT/fmax ~ 30/78 GHz for LG = 150 nm and NW diameter ~160 nm. The gate capacitance (Cg) is extracted and ~2/3 of the total Cg is parasitic, which can be reduced with denser NW arrays. Excellent agreement between measured and modeled RF performance is achieved.
- radio frequency
- small-signal model
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering