RF performance of planar III-V nanowire-array transistors grown by vapor-liquid-solid epitaxy

Kelson D. Chabak, Xin Miao, Chen Zhang, Dennis E. Walker, Parsian K. Mohseni, Xiuling Li

Research output: Contribution to journalArticlepeer-review

Abstract

The radio frequency (RF) performance of a III'V transistor comprised of nanowire (NW) high-electron mobility channels, grown by planar vapor'liquid'solid epitaxy in parallel arrays, is examined. An equivalent small-signal circuit model was used to study the contributing extrinsic and intrinsic passive elements on the NW performance as a function of bias and gate length (LG). Adequate intrinsic gain (gm/gds) ~25 with low intrinsic (Ri) and terminal resistances (RG, RS, RD) lead to an fT/fmax ~ 30/78 GHz for LG = 150 nm and NW diameter ~160 nm. The gate capacitance (Cg) is extracted and ~2/3 of the total Cg is parasitic, which can be reduced with denser NW arrays. Excellent agreement between measured and modeled RF performance is achieved.

Original languageEnglish (US)
Article number7072468
Pages (from-to)445-447
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number5
DOIs
StatePublished - May 1 2015

Keywords

  • Nanowire
  • parallel-array
  • radio frequency
  • small-signal model
  • transistor
  • vapor-liquid-solid

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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