RF performance of 3D III-V nanowire T-Gate HEMTs grown by VLS method

Kelson D. Chabak, Xin Miao, Chen Zhang, Dennis E. Walker, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Continued down-scaling of digital and RF electronics has spawn new research efforts in various nanotechnologies such as 2D semiconducting sheets and nanowires as the conducting transistor channel. Nanoscale field-effect transistors (FETs) promise to bring power-efficient operation, improved short channel effects, and added functionalities beyond conventional top-down planar devices such as facile heterogeneous integration. So far, impressive results with fT> 400 GHz have been achieved with graphene FETs [1]. However, the highest achieved fmax for carbon-based devices is below 70 GHz [2] which is related to poor output conductance (gds) and weak channel modulation either from metallic carbon nanotubes or a metallic-like gapless graphene channel. While a high fT is important, FETs generally benefit from fmax > fT for amplification of RF signals [3]. III-V nanowires (NWs), on the other hand, retain well-known transport characteristics with inherent 3D profile for improved electrostatics. The most commonly used growth method for NWs is via the metal-assisted vapor-liquid-solid (VLS) mechanism. Several III-V NW FETs have been reported with excellent dc performance, but preference for NW growth to proceed normal to the substrate has stunted RF devices where arrays of NW channels are required to deliver sufficiently high raw current. Vertical InAs NW FETs have been reported with impressive 100+ GHz performance, but remain limited by challenging device fabrication and parasitic overlapping pad capacitance [4,5]. Both of these limitations can be avoided by growing high-density NW arrays along the surface of the substrate. Here, we present the first demonstration of VLS grown III-V NW channels self-assembled in parallel arrays with fT/f max > 30/70+ GHz using a GaAs channel. These results are state-of-the-art for III-V NWs assembled in planar arrays.

Original languageEnglish (US)
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages211-212
Number of pages2
ISBN (Print)9781479954056
DOIs
StatePublished - Jan 1 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: Jun 22 2014Jun 25 2014

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other72nd Device Research Conference, DRC 2014
CountryUnited States
CitySanta Barbara, CA
Period6/22/146/25/14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'RF performance of 3D III-V nanowire T-Gate HEMTs grown by VLS method'. Together they form a unique fingerprint.

  • Cite this

    Chabak, K. D., Miao, X., Zhang, C., Walker, D. E., & Li, X. (2014). RF performance of 3D III-V nanowire T-Gate HEMTs grown by VLS method. In 72nd Device Research Conference, DRC 2014 - Conference Digest (pp. 211-212). [6872372] (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2014.6872372