RF-MEMS varactor with minimal contact

Qin Shen, Ioannis Chasiotis, N. Scott Barker

Research output: Chapter in Book/Report/Conference proceedingConference contribution


An innovative RF-MEMS varactor has been developed for use in distributed RF-MEMS circuits such as phase shifters and tunable matching networks where the capacitance ratio between on-and off-state must be limited to 2-10. By fabricating standoffs on the bottom side of the beam, this device eliminates the intimate contact between the RF-MEMS and dielectric, that is found in typical RF-MEMS beam capacitive switches. These standoffs limit the range of motion, allowing the capacitance ratio to be set, and also greatly reduces the contact area thus preventing stiction from occurring. The RF-MEMS switch has been fabricated with initial measurements demonstrating a capacitance ratio of 2.5. Preliminary reliability testing results demonstrate that this RF-MEMS design is very robust.

Original languageEnglish (US)
Title of host publicationProceedings of the ASME/STLE International Joint Tribology Conference, IJTC 2004
PublisherAmerican Society of Mechanical Engineers
Number of pages5
EditionPART A
ISBN (Print)0791841812, 9780791841815
StatePublished - 2004
Externally publishedYes
Event2004 ASME/STLE International Joint Tribology Conference - Long Beach, CA, United States
Duration: Oct 24 2004Oct 27 2004

Publication series

NameProceedings of the ASME/STLE International Joint Tribology Conference, IJTC 2004
NumberPART A


Other2004 ASME/STLE International Joint Tribology Conference
Country/TerritoryUnited States
CityLong Beach, CA

ASJC Scopus subject areas

  • General Engineering


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