Retention time improvement by fast-pull and fast-cool[FPFC] ingot growing combined with proper arrangement of subsequent thermal budget for 0.18um DRAM cell and beyond

K. Ilgweon, K. Jaesoon, L. Kyosung, K. Dongchan, S. Jungho, C. Junho, Nam Sung Kim, Y. Heesik, C. Youngil, P. Juseok, K. Hoyup, S. Youngjin, P. Daeyoung, K. Jibum

Research output: Contribution to conferencePaper

Abstract

The denudation scheme based on vacancy-assisted BMD[Bulk Micro Defect] formation for reducing grown-in defects and the method of reducing STI-stress caused by denudation thermal budget was investigated to improve the retention time of high density DRAM with STI[Shallow Trench Isolation]. In this paper, we report the denudation scheme employing low-cost FPFC[Fast-Pull and Fast-Cool] ingot growing, combined with proper arrangement of subsequent thermal budget, resulting in excellent improvement of DRAM retention time.

Original languageEnglish (US)
Pages125-126
Number of pages2
StatePublished - Jan 1 2001
Event2001 VLSI Technology Symposium - Kyoto, Japan
Duration: Jun 12 2001Jun 14 2001

Other

Other2001 VLSI Technology Symposium
CountryJapan
CityKyoto
Period6/12/016/14/01

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ilgweon, K., Jaesoon, K., Kyosung, L., Dongchan, K., Jungho, S., Junho, C., Kim, N. S., Heesik, Y., Youngil, C., Juseok, P., Hoyup, K., Youngjin, S., Daeyoung, P., & Jibum, K. (2001). Retention time improvement by fast-pull and fast-cool[FPFC] ingot growing combined with proper arrangement of subsequent thermal budget for 0.18um DRAM cell and beyond. 125-126. Paper presented at 2001 VLSI Technology Symposium, Kyoto, Japan.