Response to comments to "a distributive-transconductance model for border traps in III¿V/High-k MOS capacitors"

Chen Zhang; Min Xu; Peide D. Ye; Xiuling Li

doi:10.1109/LED.2013.2282234

Response to comments to "a distributive-transconductance model for border traps in III¿V/High-k MOS capacitors"

Chen Zhang, Min Xu, Peide D. Ye, Xiuling Li

Electrical and Computer Engineering

Research output: Contribution to journal › Letter › peer-review

Original language	English (US)
Article number	6619443
Pages (from-to)	1441
Number of pages	1
Journal	IEEE Electron Device Letters
Volume	34
Issue number	11
DOIs	https://doi.org/10.1109/LED.2013.2282234
State	Published - 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2282234

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title = "Response to comments to {"}a distributive-transconductance model for border traps in III¿V/High-k MOS capacitors{"}",

author = "Chen Zhang and Min Xu and Ye, {Peide D.} and Xiuling Li",

year = "2013",

doi = "10.1109/LED.2013.2282234",

language = "English (US)",

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pages = "1441",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Ye, Peide D.

AU - Li, Xiuling

PY - 2013

Y1 - 2013

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DO - 10.1109/LED.2013.2282234

M3 - Letter

AN - SCOPUS:84887252617

SN - 0741-3106

VL - 34

SP - 1441

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 6619443

ER -

Response to comments to "a distributive-transconductance model for border traps in III¿V/High-k MOS capacitors"

ASJC Scopus subject areas

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