Response to comments to "a distributive-transconductance model for border traps in III¿V/High-k MOS capacitors"

Chen Zhang, Min Xu, Peide D. Ye, Xiuling Li

Research output: Contribution to journalLetter

Original languageEnglish (US)
Article number6619443
Number of pages1
JournalIEEE Electron Device Letters
Volume34
Issue number11
DOIs
StatePublished - Oct 16 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Response to comments to "a distributive-transconductance model for border traps in III¿V/High-k MOS capacitors". / Zhang, Chen; Xu, Min; Ye, Peide D.; Li, Xiuling.

In: IEEE Electron Device Letters, Vol. 34, No. 11, 6619443, 16.10.2013.

Research output: Contribution to journalLetter

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doi = "10.1109/LED.2013.2282234",
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volume = "34",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

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