Response to comments to "a distributive-transconductance model for border traps in III¿V/High-k MOS capacitors"

Chen Zhang, Min Xu, Peide D. Ye, Xiuling Li

Research output: Contribution to journalLetter

Original languageEnglish (US)
Article number6619443
Number of pages1
JournalIEEE Electron Device Letters
Volume34
Issue number11
DOIs
StatePublished - Oct 16 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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