Abstract
We investigate three-dimensional resonant tunnelling (RT) through a double potential barrier with a periodic modulation of the quantum well in the plane of the layers. Both elastic and phonon-assisted RT through transverse minibands separated by minigaps are considered. By using the Breit-Wigner-like formula for the transmission probability we find a more abrupt upward portion (front) of the current-voltage characteristics and a broader negative differential resistance region than in 'conventional' RT through double barrier heterostructures. Phonon-assisted tunnelling characteristics follow the same trends.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 35-42 |
| Number of pages | 8 |
| Journal | Semiconductor Science and Technology |
| Volume | 13 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1998 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry