Resonant tunneling behavior and discrete dopant effects in narrow ultrashort ballistic silicon-on-insulator metal-oxide-semiconductor field-effect transistors

The narrow ultrasonic ballistic transport in a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) was investigated. The discrete dopant effects and electron tunneling behavior of the MOSFET devices were also studied. Simulation studies were carried out by including atomistic nature of the small devices. Variations in the threshold voltage was observed, which was dependent on the position of the dopants in the channel. The narrow channel access geometry was found to create a situation in which the impinging electron density in the source undergoes resonant tunneling in order to reach the drain end of the device.